PBSS4350T-GK Silicon NPN Transistor Designed for LCD Backlighting and Supply Line Switching Circuits

Key Attributes
Model Number: PBSS4350T-GK
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
PBSS4350T-GK
Package:
SOT-23
Product Description

Product Overview

PBSS4350T is a Silicon NPN transistor in a SOT-23 Plastic Package. It offers low VCE(sat) and high current capabilities, making it suitable for general purpose switching and muting applications. Key features include its suitability for LCD back-lighting and supply line switching circuits.

Product Attributes

  • Brand: DEMACHEL
  • Package: SOT-23
  • Type: Silicon NPN transistor
  • Marking: HZC
  • hFE Class: Class

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector Cut-Off CurrentICBOIE=0, VCB=50V100nA
Collector Cut-Off CurrentICBOIE=0, Tj=150, VCB=50V50A
Emitter Cut-Off CurrentIEBOVEB=5.0V, IC=0100nA
DC Current GainhFE(1)VCE=2.0V, IC=100mA300
DC Current GainhFE(2)VCE=2.0V, IC=500mA300
DC Current GainhFE(3)VCE=2.0V, IC=1.0A300
DC Current GainhFE(4)VCE=2.0V, IC=2.0A200
DC Current GainhFE(5)VCE=2.0V, IC=3.0A100
Collector Emitter Saturation VoltageVCE(sat)(1)IC=500mA, IB=50mA80mV
Collector Emitter Saturation VoltageVCE(sat)(2)IC=2.0A, IB=100mA280mV
Equivalent On-ResistanceRCE(sat)IC=2.0A, IB=200mA100130m
Base Emitter Saturation VoltageVBE(sat)IC=2.0A, IB=100mA1.1V
Base Emitter Saturation VoltageVBE(sat)IC=3.0A, IB=300mA1.2V
Base Emitter VoltageVBE(ON)VCE=2.0V, IC=1.0A1.2V
Transition FrequencyfTIC=100mA, VCE=5.0V, f=100MHz100MHz
Collector CapacitanceCCIE=0, VCB=10V, f=1.0MHz25pF

2509161435_GOODWORK-PBSS4350T-GK_C51912407.pdf

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