NPN transistor GOODWORK 2SC2383 offering stable amplification and switching performance for electronics
Key Attributes
Model Number:
2SC2383
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2SC2383
Package:
SOT-89
Product Description
Product Overview
The 2SC2383 is an NPN transistor featuring excellent hFE characteristics. It is designed for various electronic applications requiring reliable amplification and switching capabilities.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Absolute Maximum Ratings | VCBO | 160 | V | Collector Base Voltage |
| VCEO | 160 | V | Collector Emitter Voltage | |
| VEBO | 6 | V | Emitter Base Voltage | |
| IC | 1 | A | Collector Current | |
| IB | 0.5 | A | Base Current | |
| Ptot | 500 | mW | Collector Power Dissipation | |
| Tj | 150 | Junction Temperature | ||
| Storage Temperature Range | Tstg | -55 to +150 | ||
| Electrical Characteristics | hFE | 100-320 | - | at VCE = 5 V, IC = 200 mA (Current Gain Group) |
| ICBO | 1 | A | at VCB = 150 V (Collector Base Cutoff Current) | |
| IEBO | 1 | A | at VEB = 6 V (Emitter Base Cutoff Current) | |
| V(BR)CEO | 160 | V | at IC = 10 mA (Collector Emitter Breakdown Voltage) | |
| VCE(sat) | 1.5 | V | at IC = 500 mA, IB = 50 mA (Collector Emitter Saturation Voltage) | |
| VBE(on) | 0.45-0.75 | V | at IC = 5 mA, VCE = 5 V (Base Emitter on Voltage) | |
| fT | 100 | MHz | at VCE = 5 V, IC = 200 mA (Transition Frequency) | |
| Collector Output Capacitance | Cob | 20 | pF | at VCB = 10 V, f = 1 MHz |
2504161540_GOODWORK-2SC2383_C47435902.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
