Fast Switching P Channel Transistor GOODWORK SI2303 Trench DMOS Technology for Hand Held Instruments
Key Attributes
Model Number:
SI2303
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 P-Channel
Output Capacitance(Coss):
40pF
Pd - Power Dissipation:
1.3W
Input Capacitance(Ciss):
240pF
Gate Charge(Qg):
2.5nC
Mfr. Part #:
SI2303
Package:
SOT-23
Product Description
Product Overview
These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, provide superior switching performance, and offer high energy pulse withstand capability in avalanche and commutation modes. These devices are well-suited for high efficiency, fast switching applications.
Product Attributes
- Brand: DEMACH
- Model: SI2303
- Technology: Trench DMOS
- Features: Fast switching, Green Device Available, Suit for -4.5V Gate Drive Applications
- Applications: Notebook Load Switch, Battery Protection, Hand-held Instruments
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TA=25) | -3.0 | A | |||
| ID | Drain Current Continuous (TA=70) | -0.21 | A | |||
| IDM | Drain Current Pulsed | -10 | A | |||
| PD | Power Dissipation (TA=25) | 1.3 | W | |||
| PD | Power Dissipation Derate above 25 | 0.012 | W/ | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | 80 | /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.02 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=75 | -10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-2.8A | 120 | m | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-2.0A | 170 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | -2.8 | mV/ | |||
| gfs | Forward Transconductance | VDS=-10V , ID=-1A | 3 | S | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=-24V , VGS=-4.5V , ID=-2A | 2.5 | nC | ||
| Qgs | Gate-Source Charge | 0.1 | ||||
| Qgd | Gate-Drain Charge | 1.8 | ||||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=6 ID=-1A | 6.1 | ns | ||
| Tr | Rise Time | 8.7 | ||||
| Td(off) | Turn-Off Delay Time | 33.2 | ||||
| Tf | Fall Time | 3.7 | ||||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , F=1MHz | 240 | pF | ||
| Coss | Output Capacitance | 40 | ||||
| Crss | Reverse Transfer Capacitance | 28 | ||||
| Rg | Gate resistance | VGS=0V, VDS=0V, F=1MHz | 9.5 | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -3.0 | A | ||
| ISM | Pulsed Source Current | -6.0 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
2411281058_GOODWORK-SI2303_C42395460.pdf
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