High cell density P channel MOSFET GOODWORK 30P06 designed for synchronous buck converter efficiency
Key Attributes
Model Number:
30P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
30mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
585pF@15V
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
6.1nC@4.5V
Mfr. Part #:
30P06
Package:
TO-252
Product Description
Product Overview
The 30P06 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed and features super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -30 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -12 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V | -4.5 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V | -4.0 | A | |||
| IDM | Pulsed Drain Current | -30 | A | |||
| EAS | Single Pulse Avalanche Energy | 18.1 | mJ | |||
| IAS | Avalanche Current | -13 | A | |||
| PD@TC=25 | Total Power Dissipation | 25 | W | |||
| PD@TA=25 | Total Power Dissipation | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |||
| RJC | Thermal Resistance Junction-Case | 5 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | V | ||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | -0.023 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-10A | 30 | 45 | m | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-6A | 52 | 60 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.5 | V | |
| VGS(th) | VGS(th) Temperature Coefficient | -1 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-15A | 12 | S | ||
| Qg | Total Gate Charge | VDS=-15V , VGS=-4.5V , ID=-15A | 33.6 | nC | ||
| Qgs | Gate-Source Charge | 12 | nC | |||
| Qgd | Gate-Drain Charge | 6.1 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-15A | 1.8 | ns | ||
| Tr | Rise Time | 2.6 | ns | |||
| Td(off) | Turn-Off Delay Time | 8.6 | ns | |||
| Tf | Fall Time | 6.1 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | 585 | pF | ||
| Coss | Output Capacitance | 100 | pF | |||
| Crss | Reverse Transfer Capacitance | 85 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -20 | A | ||
| ISM | Pulsed Source Current | -30 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | IF=-15A , dI/dt=100A/s , TJ=25 | 6.1 | nS | ||
| Qrr | Reverse Recovery Charge | 1.4 | nC | |||
2504101957_GOODWORK-30P06_C46962145.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
