Trenched P channel MOSFET power device GOODWORK AOD4185 GK synchronous buck converter with low gate charge
Key Attributes
Model Number:
AOD4185-GK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
10.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 P-Channel
Output Capacitance(Coss):
282pF
Input Capacitance(Ciss):
3.05nF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
AOD4185-GK
Package:
TO-252
Product Description
Product Overview
The AOD4185 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed with full function reliability approved, making it an ideal choice for demanding power conversion scenarios.
Product Attributes
- Brand: AOD (Implied by product name)
- Certifications: RoHS, Green Product
- Features: 100% EAS Guaranteed, Green Device Available, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | -40 | A | ||
| Continuous Drain Current | ID | TC=100°C | -31 | A | ||
| Pulsed Drain Current | IDM | 1 | -200 | A | ||
| Single Pulse Avalanche Energy | EAS | 2 | 80 | mJ | ||
| Total Power Dissipation | PD | TC=25°C | 55 | W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -40 | - | - | V |
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | TJ=25°C, VDS = -40V, VGS = 0V | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | TJ=100°C, VDS = -40V, VGS = 0V | - | - | 5 | µA |
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1.0 | -1.6 | -2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -16A | - | 10.5 | 13 | mΩ |
| Drain-Source On-Resistance | RDS(on) | VGS = -4.5V, ID = -12A | - | 14.2 | 20 | mΩ |
| Forward Transconductance | gfs | VDS = -10V, ID = -16A | - | 44 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = -20V, VGS =0V, f =1MHz | - | 3050 | - | pF |
| Output Capacitance | Coss | VDS = -20V, VGS =0V, f =1MHz | - | 282 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = -20V, VGS =0V, f =1MHz | - | 230 | - | pF |
| Gate Resistance | Rg | f =1MHz | - | 9 | - | Ω |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VGS = -10V,VDS = -20V, ID= -16A | - | 28 | - | nC |
| Gate-Source Charge | Qgs | VGS = -10V,VDS = -20V, ID= -16A | - | 8 | - | nC |
| Gate-Drain Charge | Qg | VGS = -10V,VDS = -20V, ID= -16A | - | 8.5 | - | nC |
| Turn-on Delay Time | td(on) | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | - | 38 | - | ns |
| Rise Time | tr | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | - | 31 | - | ns |
| Turn-off Delay Time | td(off) | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | - | 90 | - | ns |
| Fall Time | tf | VGS =-10V, VDD = -15V, RG = 3Ω, ID= -16A | - | 9.2 | - | ns |
| Drain-Source Body Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS = -1A, VGS = 0V | - | - | -1.2 | V |
| Continuous Source Current | IS | TC=25°C | - | - | -50 | A |
| Thermal Characteristics | ||||||
| Thermal Resistance from Junction-to-Ambient | RθJA | 3 | 61 | °C/W | ||
| Thermal Resistance from Junction-to-Case | RθJC | 2.27 | °C/W | |||
2504101957_GOODWORK-AOD4185-GK_C42457473.pdf
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