Plastic Encapsulated Mosfet Goodwork BSS123 With High Density Cell Design For Switching Applications
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-
RDS(on):
6Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
60pF
Gate Charge(Qg):
2nC
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The BSS123 is a Plastic-Encapsulated MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), rugged and reliable construction, and high saturation current capability. This N-MOSFET is suitable for high-density applications.
Product Attributes
- Marking Type number: BSS123
- Marking code: SAW
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (note 1) | ID | 0.17 | A | |||
| Pulsed Drain Current (tp=10us) | IDM | 0.68 | A | |||
| Continous Source-Drain Diode Current | IS | 0.17 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient (note 1) | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55~+150 | °C | |||
| Lead Temperature for Soldering Purposes(1/8 from case for 10 s) | TL | 260 | °C | |||
| STATIC CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =100V,VGS = 0V | 1 | µA | ||
| VDS =20V,VGS = 0V | 10 | nA | ||||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±50 | nA | ||
| Gate threshold voltage (note 2) | VGS(th) | VDS =VGS, ID =250µA | 1 | 2.8 | V | |
| Drain-source on-resistance(note 2) | RDS(on) | VGS =4.5V, ID =0.17A | 10 | Ω | ||
| VGS =10V, ID =0.17A | 6 | Ω | ||||
| Forward tranconductance(note 2) | gFS | VDS =10V, ID =170mA | 80 | mS | ||
| Diode forward voltage | VSD | IS=340mA, VGS = 0V | 1.3 | V | ||
| DYNAMIC CHARACTERISTICS (note 4) | ||||||
| Input Capacitance | Ciss | VDS =25V,VGS =0V,f =1MHz | 29 | 60 | pF | |
| Output Capacitance | Coss | 15 | pF | |||
| Reverse Transfer Capacitance | Crss | 6 | pF | |||
| SWITCHING CHARACTERISTICS (note 3,4) | ||||||
| Turn-on delay time | td(on) | VGS=10V,VDD=30V, ID=2.8A,RGEN=50Ω | 8 | ns | ||
| Turn-on rise time | tr | 8 | ns | |||
| Turn-off delay time | td(off) | 13 | ns | |||
| Turn-off fall time | tf | 16 | ns | |||
| Total Gate Charge | Qg | VDS=10V,ID=0.22A, VGS=10V | 1.4 | 2 | nC | |
| Gate-Source Charge | Qgs | 0.15 | 0.25 | nC | ||
| Gate-Drain Charge | Qgd | 0.2 | 0.4 | nC | ||
2411151625_GOODWORK-BSS123_C42385154.pdf
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