MOSFET Switch GOODWORK FDN360P-GK Plastic Encapsulated Device with High Saturation Current Capability
Key Attributes
Model Number:
FDN360P-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
48mΩ@10V,4.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
650pF@15V
Gate Charge(Qg):
12.5nC@10V
Mfr. Part #:
FDN360P-GK
Package:
SOT-23
Product Description
Product Overview
The FDN360P is a Plastic-Encapsulate MOSFET designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch, known for its ruggedness, reliability, and high saturation current capability. This component is suitable for various applications requiring efficient switching and power management.
Product Attributes
- Marking Type number: FDN360P
- Marking code: A79T
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | (TA=25) | -4.1 | A | ||
| Drain Current-Pulsed | IDM | (Note 1) | -20 | A | ||
| Maximum Power Dissipation | PD | 1.2 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Ambient | RJA | (Note 2) | 90 | /W | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250µA | -1 | -1.5 | -3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-4.1A | 48 | 65 | mΩ | |
| VGS=-4.5V, ID=-4A | 60 | 95 | mΩ | |||
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | 5.5 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 650 | PF | |||
| Output Capacitance | Coss | 105 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 65 | PF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | 8.5 | nS | |||
| Turn-on Rise Time | tr | 4.5 | nS | |||
| Turn-Off Delay Time | td(off) | 26 | nS | |||
| Turn-Off Fall Time | tf | VDD=-15V,RL=3.6Ω, VGS=-10V,RGEN=3Ω | 12.5 | nS | ||
| Total Gate Charge | Qg | 12.5 | nC | |||
| Gate-Source Charge | Qgs | 2.8 | nC | |||
| Gate-Drain Charge | Qg d | VDS=-15V,ID=-4A,VGS=-10V | 2.7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-4.1A | -1.2 | V | ||
2504101957_GOODWORK-FDN360P-GK_C47089137.pdf
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