Power Field Effect Transistor With Low On Resistance Goodwork 2SK3541 GK N Channel Enhancement Mode
Key Attributes
Model Number:
2SK3541-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
12Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
313mW
Input Capacitance(Ciss):
15pF
Gate Charge(Qg):
-
Mfr. Part #:
2SK3541-GK
Package:
SOT-723
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: 2SK3541
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.05 | --- | V/ |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=50 | --- | --- | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS=25V , VGS=0V , TJ=85 | --- | --- | 400 | nA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 6 | uA |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4V , ID=10mA | --- | 5.0 | 7.5 | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=2.5V , ID=1mA | --- | 6.0 | 12 | V |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | --- | --- | 1.6 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 3 | --- | mV/ | |
| Ciss | Input Capacitance | VDS=30V , VGS=0V , F=1MHz | --- | 15 | --- | pF |
| Coss | Output Capacitance | --- | 10 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 3 | --- | pF | |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 200 | mA |
| ISM | Pulsed Source Current | --- | --- | 500 | mA | |
| VSD | Diode Forward Voltage | VGS=0V , IS=0.2A , TJ=25 | --- | --- | 1.4 | V |
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID | Drain Current Continuous (TA=25) | 200 | mA |
| ID | Drain Current Continuous (TA=70) | 180 | mA |
| IDM | Drain Current Pulsed | 1.2 | A |
| PD | Power Dissipation (TC=25) | 313 | mW |
| PD | Power Dissipation Derate above 25 | 2.5 | mW/ |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
Thermal Characteristics
| Symbol | Parameter | Conditions | Typ. | Max. | Unit |
| RJA | Thermal Resistance Junction to ambient | --- | 800 | /W |
2412021443_GOODWORK-2SK3541-GK_C42402303.pdf
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