High current MOSFET GOODWORK AO4410-GK designed for synchronous buck converters and power management
Key Attributes
Model Number:
AO4410-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
152pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
5W
Input Capacitance(Ciss):
1.116nF@15V
Gate Charge(Qg):
13.3nC@10V
Mfr. Part #:
AO4410-GK
Package:
SOP-8
Product Description
Product Overview
The AO4410 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge, meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. This device provides fast switching capabilities and is suitable for various power management solutions.
Product Attributes
- Brand: AO
- Product Type: N-Ch Fast Switching MOSFET
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Product Summary | ||||||
| BVDSS | Drain-Source Breakdown Voltage | 30 | V | |||
| RDS(on) | Static Drain-Source on-Resistance | VGS=10V, ID=15A | 7.0 | 9 | m | |
| ID | Continuous Drain Current | TA=25, VGS @ 10V | 18 | A | ||
| ID | Continuous Drain Current | TA=70, VGS @ 10V | 10 | A | ||
| EAS | Single Pulse Avalanche Energy | 40 | mJ | |||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| IDM | Pulsed Drain Current | 60 | A | |||
| IAS | Avalanche Current | 35 | A | |||
| PD@TA=25 | Total Power Dissipation | 5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | 1.0 | A | ||
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS=20V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS=4.5V, ID=10A | 11 | 14 | m | |
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1.0MHz | 1116 | pF | ||
| Coss | Output Capacitance | 187 | pF | |||
| Crss | Reverse Transfer Capacitance | 152 | pF | |||
| Qg | Total Gate Charge | VDS=15V, ID=8A, VGS=10V | 13.3 | nC | ||
| Qgs | Gate-Source Charge | 3.1 | nC | |||
| Qgd | Gate-Drain(Miller) Charge | 5 | nC | |||
| td(on) | Turn-on Delay Time | VDS=15V, ID=15A, RGEN=3, VGS=10V | 15 | ns | ||
| tr | Turn-on Rise Time | 19 | ns | |||
| td(off) | Turn-off Delay Time | 35 | ns | |||
| tf | Turn-off Fall Time | 21 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | 15 | A | |||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | 60 | A | |||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS=15A | 1.2 | V | ||
| trr | Body Diode Reverse Recovery Time | IF=15A,dI/dt=100A/s | 14 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | 4.1 | nC | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 41 | /W | ||
| RJC | Thermal Resistance Junction-Case | --- | 10 | /W | ||
2412021443_GOODWORK-AO4410-GK_C42402297.pdf
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