High Energy Pulse Withstand N Channel MOSFET GOODWORK AO4882 GK Optimized for Switching Performance
Key Attributes
Model Number:
AO4882-GK
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8.5A
RDS(on):
19mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
6.42nF@25V
Pd - Power Dissipation:
3.7W
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
AO4882-GK
Package:
SOP-8
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency fast switching applications.
Product Attributes
- Brand: AO (Implied from product name AO4882)
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| VDS=40V , VGS=0V , TJ=25 | --- | --- | 1 | uA | ||
| VDS=32V , VGS=0V , TJ=125 | --- | --- | 10 | uA | ||
| IDSS | Drain-Source Leakage Current | VGS=0V , ID=250uA | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=8A | --- | 15 | 19 | m |
| VGS=4.5V , ID=5A | --- | 20 | 26 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| gfs | Forward Transconductance | VDS=10V , ID=1A | --- | 3 | --- | S |
| Qg | Total Gate Charge | VDS=20V , VGS=4.5V , ID=5A | --- | 4.5 | --- | nC |
| Qgs | Gate-Source Charge | VDS=20V , VGS=4.5V , ID=5A | --- | 1.5 | --- | nC |
| Qgd | Gate-Drain Charge | VDS=20V , VGS=4.5V , ID=5A | --- | 1.9 | --- | nC |
| td(on) | Turn-On Delay Time | VDD=20V , VGS=4.5V , RG=25 ID=1A | --- | 3.2 | --- | ns |
| tr | Rise Time | VDD=20V , VGS=4.5V , RG=25 ID=1A | --- | 8.6 | --- | ns |
| td(off) | Turn-Off Delay Time | VDD=20V , VGS=4.5V , RG=25 ID=1A | --- | 18 | --- | ns |
| tf | Fall Time | VDD=20V , VGS=4.5V , RG=25 ID=1A | --- | 6 | --- | ns |
| Ciss | Input Capacitance | VDS=25V , VGS=0V , F=1MHz | --- | 420 | --- | pF |
| Coss | Output Capacitance | VDS=25V , VGS=0V , F=1MHz | --- | 65 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=25V , VGS=0V , F=1MHz | --- | 40 | --- | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 8.5 | A |
| ISM | Pulsed Source Current | --- | --- | --- | 17 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V |
| VDS | Drain-Source Voltage | --- | --- | --- | 40 | V |
| VGS | Gate-Source Voltage | --- | --- | 20 | --- | V |
| ID | Drain Current Continuous (TC=25) | --- | --- | --- | 8.5 | A |
| ID | Drain Current Continuous (TC=100) | --- | --- | --- | 5 | A |
| IDM | Drain Current Pulsed | --- | --- | --- | 34 | A |
| PD | Power Dissipation (TC=25) | --- | --- | --- | 3.7 | W |
| PD | Power Dissipation Derate above 25 | --- | --- | 0.029 | --- | W/ |
| TSTG | Storage Temperature Range | --- | -55 | --- | 150 | |
| TJ | Operating Junction Temperature Range | --- | -55 | --- | 150 | |
| RJA | Thermal Resistance Junction to ambient | --- | --- | --- | 60 | /W |
2412021443_GOODWORK-AO4882-GK_C42402299.pdf
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