Power Electronics MOSFET GOODWORK 12N65F Featuring 650V Breakdown Voltage and Fast Switching Capability
Key Attributes
Model Number:
12N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
804mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
2.107nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
12N65F
Package:
ITO-220F
Product Description
Product Overview
The 12N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It offers a breakdown voltage of 650V and a continuous drain current of 12A, with a low on-state resistance of 0.67 (Typ.) at VGS = 10V, ID =6A. Key features include fast switching, improved dv/dt capability, and 100% avalanche tested, making it suitable for demanding power supply applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Continuous Drain Current | ID | (TC = 25°C unless otherwise specified) | 12 | A | ||
| Pulsed Drain Current | IDM | (Note1) | 48 | A | ||
| Single Pulse Avalanche Energy | EAS | (Note 2) | 900 | mJ | ||
| Avalanche Current | IAR | (Note1) | 12 | A | ||
| Repetitive Avalanche Energy | EAR | (Note1) | 33 | mJ | ||
| Reverse Diode dV/dt | dv/dt | (Note 3) | 5.5 | V/ns | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | °C | ||
| Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds | TL | 260 | °C | |||
| Mounting Torque 6-32 or M3 screw | 10 | lbf·in | 1.1 | N·m | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 650 | - | - | V |
| Breakdown Temperature Coefficient | ΔBVDSS /ΔTJ | Reference to 25°C, ID=250uA | - | 0.6 | - | V/°C |
| Zero Gate Voltage Drain Current | IDSS | VDS=650V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current,Forward | IGSSF | VGS=30V,VDS=0V | - | - | 10 | μA |
| Gate-Body Leakage Current,Reverse | IGSSR | VGS=-30V,VDS=0V | - | - | -10 | μA |
| On Characteristics | ||||||
| Gate-Source Threshold Voltage | VGS(th) | VDS=10V,ID=250uA | 2 | - | 4 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=6A | - | 0.67 | 0.804 | Ω |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHZ | - | 2107 | - | pF |
| Output Capacitance | Coss | - | 195 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 16 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=300V,ID=12A, RG=4.7Ω (Note4,5) | - | 20 | - | ns |
| Turn-On Rise Time | tr | - | 28 | - | ns | |
| Turn-Off Delay Time | td(off) | - | 55 | - | ns | |
| Turn-Off Fall Time | tf | - | 30 | - | ns | |
| Total Gate Charge | Qg | VDS=480V,ID=12A, VGS=10V, (Note4,5) | - | 58 | - | nC |
| Gate-Source Charge | Qgs | - | 14 | - | nC | |
| Gate-Drain Charge | Qgd | - | 32 | - | nC | |
| Drain-Source Body Diode Charcteristics and Maximum Ratings | ||||||
| Continuous Diode Forward Current | IS | - | - | 12 | A | |
| Pulsed Diode Forward Current | ISM | - | - | 48 | A | |
| Diode Forward Voltage | VSD | IS=12A,VGS=0V | - | - | 1.5 | V |
| Reverse Recovery Time | trr | VGS=0V,IS=12A, dIF/dt=100A/us, (Note4) | - | 600 | - | ns |
| Reverse Recovery Charge | Qrr | - | 43 | - | μC | |
2408021729_GOODWORK-12N65F_C2922158.pdf
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