P channel MOSFET GOODWORK SI2305A optimized for synchronous buck converter efficiency and performance
Key Attributes
Model Number:
SI2305A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V;42mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
132pF
Pd - Power Dissipation:
1.31W
Input Capacitance(Ciss):
830pF
Gate Charge(Qg):
8.8nC@4.5V
Mfr. Part #:
SI2305A
Package:
SOT-23-3L
Product Description
Product Overview
The SI2305A is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, meeting RoHS and Green Product requirements with full function reliability. This device is suitable for applications demanding efficient power conversion.
Product Attributes
- Brand: SI (implied from part number)
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Rating | Units | Test Condition | Min. | Typ. | Max. |
| Absolute Maximum Ratings | |||||||
| VDS | Drain-Source Voltage | -20 | V | ||||
| VGS | Gate-Source Voltage | ±12 | V | ||||
| ID@TA=25 | Continuous Drain Current, VGS @ -4.5V | -5.0 | A | ||||
| ID@TA=70 | Continuous Drain Current, VGS @ -4.5V | -3.0 | A | ||||
| IDM | Pulsed Drain Current | -16 | A | ||||
| PD@TA=25 | Total Power Dissipation | 1.31 | W | ||||
| PD@TA=70 | Total Power Dissipation | 0.84 | W | ||||
| TSTG | Storage Temperature Range | -55 to 150 | |||||
| TJ | Operating Junction Temperature Range | -55 to 150 | |||||
| Thermal Data | |||||||
| RJA | Thermal Resistance Junction-Ambient | --- | /W | 125 | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | |||||||
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units | |
| Off Characteristic | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -20 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS= -20V, VGS=0V | - | - | -1 | A | |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±12V | - | - | ±100 | nA | |
| On Characteristic | |||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250A | -0.4 | -0.7 | -1.0 | V | |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -4.5V, ID= -4.1A | - | 28 | 45 | m | |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -2.5V, ID= -3A | - | 38 | - | m | |
| Dynamic Characteristic | |||||||
| Ciss | Input Capacitance | VDS= -10V, VGS=0V, f=1.0MHz | - | 830 | - | pF | |
| Coss | Output Capacitance | - | 132 | - | pF | ||
| Crss | Reverse Transfer Capacitance | - | 85 | - | pF | ||
| Switching Characteristics | |||||||
| td(on) | Turn-on Delay Time | VDD= -10V, ID= -3.3A, RG= 1, VGEN= -4.5V | - | 10 | - | ns | |
| tr | Turn-on Rise Time | - | 32 | - | ns | ||
| td(off) | Turn-off Delay Time | - | 50 | - | ns | ||
| tf | Turn-off Fall Time | - | 51 | - | ns | ||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -5.0 | A | ||
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -16 | A | ||
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -4.1A | - | - | -1.2 | V | |
2411131614_GOODWORK-SI2305A_C22399521.pdf
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