N Channel Enhancement Mode Power Field Effect Transistor Featuring GOODWORK AO3418A Trench DMOS Technology
Key Attributes
Model Number:
AO3418A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
RDS(on):
45mΩ@10V,3A
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
250pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
3.1nC@10V
Mfr. Part #:
AO3418A
Package:
SOT-23-3L
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology, specifically engineered to minimize on-state resistance, deliver superior switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. These devices are ideal for high efficiency, fast switching applications.
Product Attributes
- Brand: AO3418A
- Device Type: N-Channel Enhancement Mode Power Field Effect Transistor
- Technology: Trench DMOS
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID | Drain Current Continuous (TA=25) | 3.8 | A | |||
| ID | Drain Current Continuous (TA=70) | 3.0 | A | |||
| IDM | Drain Current Pulsed | 12 | A | |||
| PD | Power Dissipation (TA=25) | 1.3 | W | |||
| PD | Power Dissipation Derate above 25 | 2.22 | mW/ | |||
| TSTG | Storage Temperature Range | -50 | 150 | |||
| TJ | Operating Junction Temperature Range | -50 | 150 | |||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction to ambient | 450 | /W | |||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.018 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=125 | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=3A | 45 | 55 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A | 48 | 65 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 1.0 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | -3.2 | mV/ | |||
| gfs | Forward Transconductance | VDS=10V , ID=2A | 2.3 | S | ||
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=24V , VGS=10V , ID=1A | 3.1 | nC | ||
| Qgs | Gate-Source Charge | 0.1 | ||||
| Qgd | Gate-Drain Charge | 1.7 | ||||
| Td(on) | Turn-On Delay Time | VDD=24V , VGS=10V , RG=3.3Ω ID=1A | 2.2 | ns | ||
| Tr | Rise Time | 6.9 | ||||
| Td(off) | Turn-Off Delay Time | 15.2 | ||||
| Tf | Fall Time | 4.5 | ||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , F=1MHz | 250 | pF | ||
| Coss | Output Capacitance | 40 | ||||
| Crss | Reverse Transfer Capacitance | 20 | ||||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 3.8 | A | ||
| ISM | Pulsed Source Current | 7.6 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
2504101957_GOODWORK-AO3418A_C42456352.pdf
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