High current handling 60V N Channel Trench MOSFET GOODWORK AO3422 designed for power management and PWM applications
Key Attributes
Model Number:
AO3422
Product Custom Attributes
Mfr. Part #:
AO3422
Package:
SOT-23
Product Description
Product Overview
The AO3422 is a 60V N-Channel Trench Power MOSFET designed for high-performance applications. It features low gate charge and high power and current handling capabilities, making it suitable for PWM applications, load switches, and power management. This lead-free product offers excellent efficiency and reliability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage (VDS) | (VGS=0V) | 60 | V | ||
| (VGS=0V) | 60 | V | |||
| VGS=0V, ID=250A | 60 | V | |||
| Gate-Source Voltage (VGS) | (VDS=0V) | 20 | V | ||
| Drain Current-Continuous | (TA=25) | 3 | A | ||
| (TA=100) | 1.9 | A | |||
| Drain Current-Continuous@ Current-Pulsed (Note 1) | 12 | A | |||
| Maximum Power Dissipation (PD) | (TA=25) | 1.5 | W | ||
| (TA=100) | 0.6 | W | |||
| Avalanche energy (EAS) (Note 2) | 12 | mJ | |||
| Operating Junction and Storage Temperature Range (TJ, TSTG) | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | 83 | /W | |||
| Zero Gate Voltage Drain Current (IDSS) | VDS=60V, VGS=0V TJ=25 | 1 | A | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=60V, VGS=0V TJ=125 | 100 | A | ||
| Gate-Body Leakage Current (IGSS) | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=250A | 1 | 2.5 | V | |
| Forward Transconductance (gFS) | VDS=5V, ID=2A | 4.1 | S | ||
| Drain-Source On-State Resistance (RDS(ON)) | VGS=10V, ID=2A TJ=25 | 75 | 85 | m | |
| VGS=4.5V, ID=1.5A TJ=25 | 90 | 100 | m | ||
| Input Capacitance (Ciss) | VDS=30V,VGS=0V, f=1.0MHz | 369 | pF | ||
| Output Capacitance (Coss) | 28 | pF | |||
| Reverse Transfer Capacitance (Crss) | 22 | pF | |||
| Gate resistance (Rg) | VGS=0V, VDS=0V, f=1.0MHz | 0.78 | |||
| Turn-on Delay Time (td(on)) | VGS=10V, VDS=30V, RL=15, RGEN=3 | 5 | nS | ||
| Turn-on Rise Time (tr) | 8 | nS | |||
| Turn-Off Delay Time (td(off)) | 36 | nS | |||
| Turn-Off Fall Time (tf) | 21 | nS | |||
| Total Gate Charge (Qg) | VGS=10V, VDS=30V, ID=2A | 9 | nC | ||
| Gate-Source Charge (Qgs) | 1.6 | nC | |||
| Gate-Drain Charge (Qgd) | 2 | nC | |||
| Source-Drain Current (IS) (Body Diode) | 3 | A | |||
| Forward on Voltage (VSD) (Note 3) | VGS=0V, IS=2A | 1.2 | V | ||
| Reverse Recovery Time (trr) | IF=2A, dI/dt=100A/s | 20 | ns | ||
| Reverse Recovery Charge (Qrr) | IF=2A, dI/dt=100A/s | 8 | nC |
2512031102_GOODWORK-AO3422_C53100816.pdf
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