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quality Surface Mount NPN Bipolar Transistor Guangdong Hottech MMBT3904 SOT23 Package Molded Plastic UL 94V0 factory
quality Surface Mount NPN Bipolar Transistor Guangdong Hottech MMBT3904 SOT23 Package Molded Plastic UL 94V0 factory

Surface Mount NPN Bipolar Transistor Guangdong Hottech MMBT3904 SOT23 Package Molded Plastic UL 94V0

Key Attributes
Model Number: MMBT3904
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description

Product Overview

The MMBT3904 is an NPN bipolar transistor designed for surface mount applications. It serves as a complementary device to the MMBT3906, offering reliable performance in a compact SOT-23 package. Constructed from molded plastic with UL 94V-0 flammability classification, this transistor is suitable for various electronic circuits requiring signal amplification and switching.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Product Name: MMBT3904
  • Type: BIPOLAR TRANSISTOR (NPN)
  • Package: SOT-23
  • Case Material: Molded Plastic
  • Flammability Classification: UL 94V-0
  • Origin: China (implied by Shenzhen Hottech Electronics)
  • Complementary to: MMBT3906

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC200mA
Collector Power DissipationPC200mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO60VIC=10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO40VIC=1mAIB=0
Emitter-base breakdown voltageV(BR)EBO6VIE=10uAIC=0
Collector cut-off currentICBO0.1uAVCB=60V, IE=0
Collector cut-off currentICEX0.05uAVCE=30V, VBE(OFF)=3V
Emitter cut-off currentIEBO0.1uAVEB=5V, IC=0
DC current gain (hFE1)hFE1100-300VCE=1V, IC=10mA
DC current gain (hFE2)hFE260VCE=1V, IC=50mA
DC current gain (hFE3)hFE330VCE=1V, IC=100mA
Collector-emitter saturation voltageVCE(sat)0.3VIC=50mAIB=5mA
Base-emitter saturation voltageVBE(sat)0.95VIC=50mAIB=5mA
Transition frequencyfT300MHzVCE=20V,IC=10mA,f=100MHz
Delay timetd35nsVCC=3V, VBE(OFF)=0.5V, IC=10mAIB1=1mA
Rise timetr35nsVCC=3V,IC=10mA IB1=IB2=1mA
Storage timetS200nsVCC=3V,IC=10mA IB1=IB2=1mA
Fall timetf50nsVCC=3V,IC=10mA IB1=IB2=1mA
Thermal Resistance Junction To AmbientRJA625C/W

2410122030_Guangdong-Hottech-MMBT3904_C181119.pdf

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