Low On State Resistance and Fast Switching P Channel Transistor Goodwork AO4459 GK for Load Switches
Key Attributes
Model Number:
AO4459-GK
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.5A
RDS(on):
30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
230pF
Number:
1 P-Channel
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.4nF
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
5.1nC@4.5V
Mfr. Part #:
AO4459-GK
Package:
SOP-8
Product Description
Product Overview
These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, provide superior switching performance, and ensure high energy pulse withstand capability in avalanche and commutation modes. They are well-suited for high efficiency, fast switching applications, including notebook load switches, battery protection, and hand-held instruments. Features include suitability for -4.5V gate drive applications, a green device option, and fast switching capabilities.
Product Attributes
- Brand: AO (implied by AO4459)
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID | Drain Current – Continuous (TC=25°C) | -6.5 | A | ||||
| ID | Drain Current – Continuous (TC=100°C) | -5.5 | A | ||||
| IDM | Drain Current – Pulsed1 | -30 | A | ||||
| PD | Power Dissipation (TC=25°C) | 2.1 | W | ||||
| PD | Power Dissipation – Derate above 25°C | 0.017 | W/°C | ||||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | °C | |||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25°C | -1 | uA | |||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=125°C | -10 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | |||
| RθJA | Thermal Resistance Junction to ambient | 60 | °Ω/W | ||||
| On Characteristics | RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-6A | 30 | 45 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-5A | 50 | 70 | mΩ | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V | |
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 3.5 | S | |||
| Dynamic and switching Characteristics | Qg | Total Gate Charge2,3 | VDS=-15V , VGS=-4.5V , ID=-3A | 5.1 | nC | ||
| Qgs | Gate-Source Charge2,3 | 2 | |||||
| Qgd | Gate-Drain Charge2,3 | 2.2 | |||||
| Td(on) | Turn-On Delay Time2,3 | VDD=-15V , VGS=-10V , RG=6Ω , D=-1A | 3.4 | ns | |||
| Tr | Rise Time2,3 | 10.8 | ns | ||||
| Drain-Source Diode Characteristics | Td(off) | Turn-Off Delay Time2,3 | 26.9 | ns | |||
| Tf | Fall Time2,3 | 6.9 | ns | ||||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , F=1MHz | 1400 | pF | |||
| Coss | Output Capacitance | 300 | pF | ||||
| Crss | Reverse Transfer Capacitance | 230 | pF | ||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -6.5 | A | |||
| ISM | Pulsed Source Current | -13 | A | ||||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25°C | -1.2 | V |
2504101957_GOODWORK-AO4459-GK_C46061576.pdf
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