N Channel Power MOSFET Hangzhou Silan Microelectronics SVF3878PN with Low On Resistance TO3P Package
Key Attributes
Model Number:
SVF3878PN
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
900V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
47pF
Number:
1 N-channel
Output Capacitance(Coss):
208pF
Input Capacitance(Ciss):
2.009nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
68nC@10V
Mfr. Part #:
SVF3878PN
Package:
TO-3P-3
Product Description
Product Overview
The SVF3878PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior robustness in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Material: Pb free
- Package: TO-3P
Technical Specifications
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 900 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=900V, VGS=0V | -- | -- | 100 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 10.0 | A |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.5 | -- | 4.5 | V |
| On State Resistance | RDS(on) | VGS=10V, ID=4.5A | -- | 1.0 | 1.28 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 2009 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 208 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 47 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=400V, RG=25, ID=4.0A | -- | 22 | -- | ns |
| Turn-on Rise Time | tr | VDD=400V, RG=25, ID=4.0A | -- | 28 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=400V, RG=25, ID=4.0A | -- | 84 | -- | ns |
| Turn-off Fall Time | tf | VDD=400V, RG=25, ID=4.0A | -- | 30 | -- | ns |
| Total Gate Charge | Qg | VDD=450V, VGS=10V, ID=9.0A | -- | 68 | -- | nC |
| Gate-Source Charge | Qgs | VDD=450V, VGS=10V, ID=9.0A | -- | 10 | -- | nC |
| Gate-Drain Charge | Qg d | VDD=450V, VGS=10V, ID=9.0A | -- | 39 | -- | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Source Current | IS | -- | -- | -- | 9.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 27 | A |
| Diode Forward Voltage | VSD | IS=9.0A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 715 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 6.5 | -- | C |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | UNLESS OTHERWISE NOTED, TA=25C | -- | -- | 900 | V |
| Gate-Source Voltage | VGS | UNLESS OTHERWISE NOTED, TA=25C | -- | 30 | -- | V |
| Drain Current | ID | TC=25C | -- | 9.0 | -- | A |
| Drain Current | ID | TC=100C | -- | 5.7 | -- | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 27.0 | A |
| Power Dissipation | PD | TC=25C | -- | -- | 150 | W |
| Power Dissipation Derate | -- | above 25C | -- | -- | 1.2 | W/C |
| Single Pulsed Avalanche Energy | EAS | Note 1 | -- | -- | 966 | mJ |
| Operation Junction Temperature Range | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Range | Tstg | -- | -55 | -- | +150 | C |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | -- | 0.83 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | -- | 50 | C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF3878PN_C393727.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
