Voltage Controlled N Channel Transistor GOODWORK BSS139 with High Density Cell Design and Ruggedness
Key Attributes
Model Number:
BSS139
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V,220mA
Gate Threshold Voltage (Vgs(th)):
1.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF@25V
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS139
Package:
SOT-23
Product Description
Product Overview
The BSS139 is an N-Channel Enhancement Mode Field Effect Transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON), ruggedness, reliability, and high saturation current capability. This transistor is suitable for high-density applications.
Product Attributes
- Marking Type number: BSS139
- Marking code: M8W
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 50 | V | |||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | 0.22 | A | |||
| Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient | RθJA | 357 | ℃/W | |||
| Operating Temperature | Tj | -55 | +150 | ℃ | ||
| Storage Temperature | Tstg | -55 | +150 | ℃ | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 50 | V | ||
| Gate-body leakage | IGSS | VDS =0V, VGS =±20V | ±10 | µA | ||
| Zero gate voltage drain current | IDSS | VDS =50V, VGS =0V | 0.5 | µA | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 0.80 | 1.50 | V | |
| Static drain-source on-resistance | RDS(on) | VGS =10V, ID =0.22A | 3.50 | Ω | ||
| Static drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.22A | 6 | Ω | ||
| Forward transconductance | gFS | VDS =10V, ID =0.22A | 0.12 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f=1MHz | 27 | pF | ||
| Output capacitance | Coss | VDS =25V,VGS =0V, f=1MHz | 13 | pF | ||
| Reverse transfer capacitance | Crss | VDS =25V,VGS =0V, f=1MHz | 6 | pF | ||
| Turn-on delay time | td(on) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 5 | ns | ||
| Rise time | tr | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 18 | ns | ||
| Turn-off delay time | td(off) | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 36 | ns | ||
| Fall time | tf | VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω | 14 | ns | ||
| Body diode forward voltage | VSD | IS=0.44A, VGS = 0V | 1.4 | V |
2504101957_GOODWORK-BSS139_C46061575.pdf
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