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quality NPN bipolar transistor Guangdong Hottech MMBT2222A epitaxial planar die in SOT23 package for general factory
quality NPN bipolar transistor Guangdong Hottech MMBT2222A epitaxial planar die in SOT23 package for general factory

NPN bipolar transistor Guangdong Hottech MMBT2222A epitaxial planar die in SOT23 package for general

Key Attributes
Model Number: MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description

Product Overview

The MMBT2222A is a complementary NPN bipolar transistor designed for surface mount applications. It features an epitaxial planar die construction and is housed in a SOT-23 package. This device is suitable for general-purpose amplification and switching applications.

Product Attributes

  • Brand: HOTTECH (implied by copyright and email)
  • Complementary to: MMBT2907A
  • Construction: Epitaxial planar die
  • Package: SOT-23
  • Case Material: Molded Plastic
  • UL Flammability Classification: 94V-0
  • Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO75V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector CurrentIC600mA
Collector Power DissipationPC300mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~+150C
Collector-base breakdown voltageV(BR)CBO75VIC=10uAIE=0
Collector-emitter breakdown voltageV(BR)CEO40VIC=10mAIB=0
Emitter-base breakdown voltageV(BR)EBO6VIE=10uAIC=0
Collector cut-off currentICBO0.01uAVCB=60V, IE=0
Collector cut-off currentICEX0.01uAVCE=30V, VBE(OFF)=3V
Emitter cut-off currentIEBO0.1uAVEB=3V, IC=0
DC current gain (hFE1)hFE1100-300VCE=10V, IC=150mA
DC current gain (hFE2)hFE240VCE=10V, IC=0.1mA
DC current gain (hFE3)hFE342VCE=10V, IC=500mA
Collector-emitter saturation voltageVCE(sat)1VIC=500mAIB=50mA
Collector-emitter saturation voltageVCE(sat)0.3VIC=150mAIB=15mA
Base-emitter saturation voltageVBE(sat)2.0VIC=500mAIB=50mA
Base-emitter saturation voltageVBE(sat)1.2VIC=150mAIB=15mA
Transition frequencyfT150MHzVCE=20V,IC=20mA,f=100MHz
Delay timetd10nsVCC=30V, VBE(OFF)=0.5V, IC=150mAIB1=15mA
Rise timetr25nsVCC=30V,IC=150mA IB1=IB2=15mA
Storage timetS225nsVCC=30V,IC=150mA IB1=IB2=15mA
Fall timetf60nsVCC=30V,IC=150mA IB1=IB2=15mA

2410122030_Guangdong-Hottech-MMBT2222A_C181121.pdf

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