Durable compact MOSFET GOODWORK IRLML6402 designed for switching and power handling in dense circuits
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
RDS(on):
80mΩ@2.5V,3.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
550mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
110pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
633pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Product Overview
The IRLML6402 is a voltage-controlled small signal switch designed for high-density cell applications, offering low RDS(ON). It is rugged, reliable, and capable of high saturation current. This MOSFET is suitable for various applications requiring efficient switching and power handling.
Product Attributes
- Brand: DEMACHEL
- Type: SOT-23 Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-Source Voltage | VDS | -20 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current | ID | -3.7 | A | VGS=4.5V @ TA=25 |
| Continuous Drain Current | ID | -2.2 | A | VGS=4.5V @ TA=70 |
| Pulsed Drain Current | IDM | -30 | A | a.Repetitive Rating :Pulse width limited by maximum junction temperature |
| Power Dissipation | PD | 1.3 | W | @ TA=25 |
| Power Dissipation | PD | 0.8 | W | @ TA=70 |
| Single Pulse Avalanche Energy | EAS | 11 | mJ | b.Starting TJ=25, L=1.65mH, RG=25, IAS=-3.7A |
| Thermal Resistance.Junction- to-Ambient | RthJA | 100 | /W | |
| Linera Derating Factor | 0.01 | W/ | ||
| Junction Temperature | TJ | 150 | ||
| Junction and Storage Temperature Range | Tstg | -55 to 150 | ||
| Drain-source Breakdown voltage | VDSS | -20 | V | ID = -1.0 mA, VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | µA | VDS = -20 V, VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | -25 | µA | VDS = -20 V, VGS = 0V, TJ = 150 |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VDS = ±12V |
| Gate Threshold Voltage | VGS(th) | -0.40 to -1.0 | V | VDS = VGS, ID = -250 µA |
| Static drain-source on- resistance | RDS(on) | 0.050 | VGS = -4.5V, ID = -3.1A | |
| Static drain-source on- resistance | RDS(on) | 0.080 to 0.135 | ID= -3.1A, VGS = -2.5V | |
| Forward Transconductance | gfs | 8.0 to 12 | S | VDS = -10 V, ID = -3.7A |
| Input capacitance | Ciss | 145 | pF | VDS = -10 V, VGS = 0 V, f= 1MHz |
| Output capacitance | Coss | 110 | pF | VDS = -10 V, VGS = 0 V, f= 1MHz |
| Reverse transfer capacitance | Crss | 12 | pF | VDS = -10 V, VGS = 0 V, f= 1MHz |
| Turn-on delay time | td(on) | 1.2 to 1.8 | ns | VDD= -10 V, ID = -1.0 A, RGEN = 3.7 |
| Rise time | tr | 350 | ns | VDD= -10 V, ID = -1.0 A, RGEN = 3.7 |
| Turn-off delay time | td(off) | 48 | ns | VDD= -10 V, ID = -1.0 A, RGEN = 3.7 |
| Fall time | tf | 588 | ns | VDD= -10 V, ID = -1.0 A, RGEN = 3.7 |
| Reverse recovery time | trr | 43 | ns | IF = -1.0 A, di/dt = 100 A/µs |
| Reverse recovery charge | qrr | 11 | nC | IF = -1.0 A, di/dt = 100 A/µs |
| Continuous source current | IS | -1.3 | A | |
| Pulsed source current | ISM | -22 | A | |
| Diode forward voltage | VSD | -1.2 | V | TJ=25, IS = -1.0 A |
2410121807_GOODWORK-IRLML6402_C5807881.pdf
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