86--136 6733 2386
quality Low RDS ON N Channel Enhancement Mode Transistor GOODWORK AO3416 Designed for High Saturation Current factory
quality Low RDS ON N Channel Enhancement Mode Transistor GOODWORK AO3416 Designed for High Saturation Current factory

Low RDS ON N Channel Enhancement Mode Transistor GOODWORK AO3416 Designed for High Saturation Current

Key Attributes
Model Number: AO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
34mΩ@1.8V,5A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
87pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description

Product Overview

The AO3416 is a N-Channel Enhancement Mode Field Effect Transistor designed for high-density cell applications, offering low RDS(ON). It functions as a voltage-controlled small signal switch, characterized by its ruggedness, reliability, and high saturation current capability. Suitable for various electronic applications requiring efficient switching.

Product Attributes

  • Brand: DEMACHEL
  • Type: AO3416
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageVDSSID=250uA, VGS=0V20V
Gate-Body Leakage CurrentIGSSVDS=0V, VGS=8V10uA
Gate Threshold VoltageVGS(th)VDS=VGS , ID=250A0.41.1V
On-State Drain CurrentID(on)VDS =5 V, VGS = 4.5 V30A
Static Drain-Source On-ResistanceRDS(On)VGS=4.5V, ID=6.5A22m
VGS=4.5V, ID=6.5A, TJ=12530m
VGS=2.5V, ID=5.5A26m
VGS=1.8V, ID=5A34m
Forward TransconductancegFSVDS=5V, ID=6.5A50S
Input CapacitanceCissVGS=0V,VDS=0V,f=1MHz12951650pF
Output CapacitanceCoss160pF
Reverse Transfer CapacitanceCrss87pF
Gate ResistanceRg1.8K
Total Gate ChargeQg10nC
Gate Source ChargeQgs4.2nC
Gate Drain ChargeQg2.6nC
Turn-On Delay Timetd(on)280ns
Turn-On Rise Timetr328ns
Turn-Off Delay Timetd(off)3.76ns
Turn-Off Fall Timetf2.24ns
Body Diode Reverse Recovery Timetrr3141nC
Body Diode Reverse Recovery ChargeQrr6.8nC
Maximum Body-Diode Continuous CurrentIS2A
Diode Forward VoltageVSDIS=1.0A,VGS=0V0.621V
Zero Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V1uA
VDS=20V, VGS=0V, Ta=705uA
Continuous Drain CurrentIDTa=256.5A
Ta=705.2A
Pulsed Drain CurrentIDM30A
Power DissipationPDTa=251.4W
Ta=700.9W
Thermal Resistance.Junction- to-AmbientRthJAt10sec90125/W
Steady State Thermal Resistance.Junction-to-FootRthJF80/W
Junction TemperatureTJ150
Storage Temperature RangeTstg-55150

2410122007_GOODWORK-AO3416_C5248038.pdf

Related Products
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
quality Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications factory
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.