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quality N channel MOSFET Hangzhou Silan Microelectronics SVF4N70F for power supply and motor driver applications factory
quality N channel MOSFET Hangzhou Silan Microelectronics SVF4N70F for power supply and motor driver applications factory

N channel MOSFET Hangzhou Silan Microelectronics SVF4N70F for power supply and motor driver applications

Key Attributes
Model Number: SVF4N70F
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.36pF
Number:
-
Output Capacitance(Coss):
56.43pF
Input Capacitance(Ciss):
497.67pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
10.34nC@10V
Mfr. Part #:
SVF4N70F
Package:
TO-220F
Product Description

Product Overview

The SVF4N70F/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and provides robust high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Hazardous Substance Control: Pb free (SVF4N70F), Halogen free (SVF4N70D)

Technical Specifications

CharacteristicSymbolSVF4N70FSVF4N70DUnitNotes
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDS700700V
Gate-Source VoltageVGS3030V
Drain Current (TC=25C)ID4.04.0A
Drain Current (TC=100C)ID2.532.53A
Drain Current PulsedIDM16.016.0A
Power Dissipation (TC=25C)PD3377W
Derate above 25C0.260.62W/C
Single Pulsed Avalanche EnergyEAS242242mJNote 1
Operation Junction Temperature RangeTJ-55+150-55+150C
Storage Temperature RangeTstg-55+150-55+150C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-CaseRJC3.791.62C/W
Thermal Resistance, Junction-to-AmbientRJA62.562.0C/W
ELECTRICAL CHARACTERISTICS
Drain -Source Breakdown VoltageBVDSS700700VVGS=0V, ID=250A
Drain-Source Leakage CurrentIDSS1.01.0AVDS=700V, VGS=0V
Gate-Source Leakage CurrentIGSS100100nAVGS=30V, VDS=0V
Gate Threshold VoltageVGS(th)2.0 - 4.02.0 - 4.0VVGS= VDS, ID=250A
Static Drain- Source On State ResistanceRDS(on)2.5 - 3.02.5 - 3.0VGS=10V, ID=2.0A
Input CapacitanceCiss497.67497.67pFVDS=25V, VGS=0V, f=1.0MHz
Output CapacitanceCoss56.4356.43pFVDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer CapacitanceCrss2.362.36pFVDS=25V, VGS=0V, f=1.0MHz
Turn-on Delay Timetd(on)15.7315.73nsVDD=350V, ID=4.0A, RG=25, Note 2,3
Turn-on Rise Timetr34.4034.40nsVDD=350V, ID=4.0A, RG=25, Note 2,3
Turn-off Delay Timetd(off)24.9324.93nsVDD=350V, ID=4.0A, RG=25, Note 2,3
Turn-off Fall Timetf23.6023.60nsVDD=350V, ID=4.0A, RG=25, Note 2,3
Total Gate ChargeQg10.3410.34nCVDS=560V, ID=4.0A, VGS=10V, Note 2,3
Gate-Source ChargeQgs3.153.15nCVDS=560V, ID=4.0A, VGS=10V, Note 2,3
Gate-Drain ChargeQgd3.903.90nCVDS=560V, ID=4.0A, VGS=10V, Note 2,3
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source CurrentIS4.04.0AIntegral Reverse P-N Junction Diode in the MOSFET
Pulsed Source CurrentISM16.016.0A
Diode Forward VoltageVSD1.41.4VIS=4.0A,VGS=0V
Reverse Recovery TimeTrr463.85463.85nsIS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2)
Reverse Recovery ChargeQrr2.162.16CIS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2)

Notes:
1. L=30mH, IAS=3.72A, VDD=100V, RG=25, starting TJ=25C;
2. Pulse Test: Pulse width 300s, Duty cycle2%;
3. Essentially independent of operating temperature.


2501091111_Hangzhou-Silan-Microelectronics-SVF4N70F_C403823.pdf

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