Power MOSFET Hangzhou Silan Microelectronics SVF23N50PN for Switching and Energy Pulse Applications
Key Attributes
Model Number:
SVF23N50PN
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
210mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.1pF
Number:
1 N-channel
Output Capacitance(Coss):
343.8pF
Input Capacitance(Ciss):
2.5958nF
Pd - Power Dissipation:
280W
Gate Charge(Qg):
42.51nC@10V
Mfr. Part #:
SVF23N50PN
Package:
TO-3P-3
Product Description
Product Overview
The SVF23N50PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. This device is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF23N50PN
- Package: TO-3P
- Hazardous Substance Control: Pb free
- Packing Type: Tube
Technical Specifications
| Characteristic | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 500 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=500V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=11.5A | -- | 0.21 | 0.27 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 2595.8 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 343.8 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 10.1 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=250V, RG=10, ID=23.0A | -- | 42.2 | -- | ns |
| Turn-on Rise Time | tr | VDD=250V, RG=10, ID=23.0A | -- | 79.0 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=250V, RG=10, ID=23.0A | -- | 125.7 | -- | ns |
| Turn-off Fall Time | tf | VDD=250V, RG=10, ID=23.0A | -- | 71.2 | -- | ns |
| Total Gate Charge | Qg | VDD=400V, VGS=10V, ID=23.0A | -- | 42.51 | -- | nC |
| Gate-Source Charge | Qgs | VDD=400V, VGS=10V, ID=23.0A | -- | 12.9 | -- | nC |
| Gate-Drain Charge | Qgd | VDD=400V, VGS=10V, ID=23.0A | -- | 14.34 | -- | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current | IS | -- | -- | -- | 23.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 92.0 | -- |
| Diode Forward Voltage | VSD | IS=23.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=23.0A,VGS=0V, dIF/dt=100A/s | -- | 578.21 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=23.0A,VGS=0V, dIF/dt=100A/s | -- | 7.89 | -- | C |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | TC=25C UNLESS OTHERWISE NOTED | -- | -- | 500 | V |
| Gate-Source Voltage | VGS | TC=25C UNLESS OTHERWISE NOTED | -- | 30 | -- | V |
| Drain Current | ID | TC=25C | -- | 23.0 | -- | A |
| Drain Current | ID | TC=100C | -- | 14.55 | -- | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 92.0 | A |
| Power Dissipation | PD | TC=25C | -- | -- | 280 | W |
| Power Dissipation Derating | -- | -Derate above 25C | -- | -- | 2.24 | W/C |
| Single Pulsed Avalanche Energy | EAS | Note 1 | -- | -- | 2044 | mJ |
| Operation Junction Temperature Range | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Range | Tstg | -- | -55 | -- | +150 | C |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | -- | 0.45 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | -- | 50 | C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF23N50PN_C601647.pdf
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