GOODWORK 20N10 100V 20A N channel Power Trench MOSFET ideal for PWM and load switch power circuits
Key Attributes
Model Number:
20N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
48mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
74pF
Number:
1 N-channel
Output Capacitance(Coss):
85pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
2.384nF
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
20N10
Package:
TO-252
Product Description
Product Overview
The 20N10 is a 100V, 20A N-channel Power Trench MOSFET designed for various power management applications. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.
Product Attributes
- Certifications: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 100 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Pulsed Drain Current | IDM | (1) | 100 | A | ||
| Single Pulsed Avalanche Energy | EAS | (2) | 31 | mJ | ||
| Continuous Drain Current | ID | @VGS=10V, TC = 25°C | 20 | A | ||
| Continuous Drain Current | ID | @VGS=10V, TC = 100°C | 16 | A | ||
| Power Dissipation | PD | @TC = 25°C | 34 | 36 | W | |
| Power Dissipation | PD | @TC = 100°C | 16 | W | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | to | 150 | °C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250mA, VGS = 0V | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | 1.0 | mA | ||
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250mA | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 10V, ID = 20A (4) | 34 | 48 | mΩ | |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A (4) | 36 | 55 | mΩ | |
| Gate Resistance | Rg | VGS = 0V, VDS = 50V, f = 1MHz | 1.8 | Ω | ||
| Input Capacitance | Ciss | VDS = 50V, ID = 20A, f = 1MHz | 1261 | 1766 | pF | |
| Output Capacitance | Coss | VGS = 0V, VDS = 50V, f = 1MHz | 45 | 63 | pF | |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 50V, f = 1MHz | 39 | 55 | pF | |
| Total Gate Charge | Qg | VGS = 0 to 10V | 31 | 44 | nC | |
| Gate Source Charge | Qgs | VDS = 50V, ID = 20A | 5 | 6 | nC | |
| Gate Drain("Miller") Charge | Qgd | 8 | 12 | nC | ||
| Turn-On Delay Time | td(on) | VGS = 10V, ID = 10A | 8 | ns | ||
| Turn-On Rise Time | tr | 19 | ns | |||
| Turn-Off Delay Time | td(off) | 39 | ns | |||
| Turn-Off Fall Time | tf | 8 | ns | |||
| Continuous Body Diode Forward Current | IS | 20 | A | |||
| Maximum Pulsed Body Diode Forward Current | ISM | 81 | A | |||
| Body Diode Forward Voltage | VSD | IF = 20A, di/dt = 100A/us | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IF = 20A, di/dt = 100A/us | 19 | 26 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, di/dt = 100A/us | 39.0 | nC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RθJC | 3.1 | °C/W | |||
| Thermal Resistance, Junction to Ambient(3) | RθJA | 40 | °C/W | |||
2408021727_GOODWORK-20N10_C22470951.pdf
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