Electronic component High Diode MMBT4403 PNP switching transistor with SOT23 plastic encapsulation
Key Attributes
Model Number:
MMBT4403
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT4403
Package:
SOT-23
Product Description
Product Overview
The MMBT4403 is a 2T SOT-23 Plastic-Encapsulate Transistor, a high diode semiconductor designed as a switching transistor. It offers reliable performance for various electronic applications.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: PNP, Switching Transistor
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A,IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA,IB=0 | -40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A ,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-35V,IE=0 | -0.1 | A | ||
| Collector cut-off current | ICEX | VCE=-35V, VBE=0.4V | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-4V,IC=0 | -0.1 | A | ||
| DC current gain | hFE1 | VCE=-1V, IC=-0.1mA | 30 | |||
| DC current gain | hFE2 | VCE=-1V, IC=-1mA | 60 | |||
| DC current gain | hFE3 | VCE=-1V, IC=-10mA | 100 | |||
| DC current gain | hFE4 | VCE=-2V, IC=-150mA | 100 | 300 | ||
| DC current gain | hFE5 | VCE=-2V, IC=-500mA | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA,IB=-15mA | -0.4 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA,IB=-50mA | -0.75 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=-150mA,IB=-15mA | -0.95 | V | ||
| Base-emitter saturation voltage | VBE(sat | IC=-500mA,IB=-50mA | -1.3 | V | ||
| Transition frequency | fT | VCE=-10V, IC=-20mA,f =100MHz | 200 | MHz | ||
| Delay time | td | VCC=-30V, VBE(off)=-0.5V IC=-150mA , IB1=-15mA | 15 | ns | ||
| Rise time | tr | 20 | ns | |||
| Storage time | ts | VCC=-30V, IC=-150mA IB1=IB2=-15mA | 225 | ns | ||
| Fall time | tf | 60 | ns |
2410121531_High-Diode-MMBT4403_C466633.pdf
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