High speed switching diode Guangdong Hottech BAS316 with 4 nanosecond switching time and 75 volt reverse voltage
Key Attributes
Model Number:
BAS316
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
5A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Voltage - DC Reverse (Vr) (Max):
75V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
250mA
Mfr. Part #:
BAS316
Package:
SOD-323
Product Description
BAS316 SWITCHING DIODE
The BAS316 is a high-speed switching diode designed for rapid switching applications. It features a fast switching time of a maximum of 4 ns, making it suitable for demanding electronic circuits. This surface mount device offers a continuous reverse voltage of up to 75V and a repetitive peak reverse voltage of 100V, with a repetitive peak forward current capability of 500mA.
Product Attributes
- Brand: Heketai (implied from email)
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Marking: A6
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
| Continuous Reverse Voltage | VR | 75 | V | |
| RMS Reverse Voltage | VRMS | 53 | V | |
| Forward Current | IF | 250 | mA | |
| Repetitive peak forward current | IFRM | 500 | mA | |
| Non-Repetitive Peak Forward Surge Current (t=1s) | IFSM | 5 | A | (square wave; TJ=25C) |
| Non-Repetitive Peak Forward Surge Current (t=1ms) | IFSM | 1 | A | (square wave; TJ=25C) |
| Non-Repetitive Peak Forward Surge Current (t=1s) | IFSM | 0.5 | A | (square wave; TJ=25C) |
| Power Dissipation | PD | 200 | mW | (TA = 25C) |
| Thermal Resistance Junction To Ambient | RJA | 625 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~ +150 | C | |
| Forward voltage | VF | 0.715 | V | IF=1mA |
| Forward voltage | VF | 0.855 | V | IF=10mA |
| Forward voltage | VF | 1.0 | V | IF=50mA |
| Forward voltage | VF | 1.25 | V | IF=150mA |
| Reverse voltage leakage current | IR | 30 | nA | VR=25V |
| Reverse voltage leakage current | IR | 1 | A | VR=75V |
| Reverse voltage leakage current | IR | 30 | nA | VR=25V,TJ=150C |
| Reverse voltage leakage current | IR | 50 | nA | VR=75V,TJ=150C |
| Diode capacitance | CD | 2 | pF | VR=0V,f=1MHz |
| Reverse recovery time | Trr | 4 | ns | IF=IR=10mA, Irr=0.1IR, RL=100 |
| Forward recovery voltage | Vfr | 1.75 | V | IF=10mA,tr=20ns |
2410121946_Guangdong-Hottech-BAS316_C5190207.pdf
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