P Channel Power MOSFET Guangdong Hottech IRLML6402 Ideal for Power Sensitive Electronic Applications
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
RDS(on):
65mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 P-Channel
Output Capacitance(Coss):
145pF
Input Capacitance(Ciss):
633pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
12nC
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Overview
The IRLML6402 is an ultra-low on-resistance, fast-switching P-Channel Power MOSFET designed for various electronic applications. It offers high performance with key advantages such as low RDS(on) and efficient power dissipation.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Classification Rating: UL 94V-0
- Weight: 0.008 grams (approximate)
Technical Specifications
| Parameter | Typ. | Max. | Units | Conditions | |
| RJA Maximum Junction-to-Ambient Thermal Resistance | 75 | 100 | ℃/W | ||
| VDS Drain-Source Voltage | -20 | V | |||
| ID @ TA = 25C Continuous Drain Current, VGS @ -4.5V | -3.7 | A | |||
| ID @ TA= 70C Continuous Drain Current, VGS @ -4.5V | -2.2 | A | |||
| IDM Pulsed Drain Current | -22 | A | |||
| PD @TA = 25C Power Dissipation | 1.3 | W | |||
| PD @TA = 70C Power Dissipation | 0.8 | W | |||
| Linear Derating Factor | 0.01 | W/C | |||
| EAS Single Pulse Avalanche Energy | 11 | mJ | Starting TJ = 25C, L = 1.65mH, RG = 25, IAS = -3.7A. | ||
| VGS Gate-to-Source Voltage | ±12 | V | |||
| TJ, TSTG Junction and Storage Temperature Range | -55 | +150 | C | ||
| V(BR)DSS Drain-to-Source Breakdown Voltage | -20 | V | VGS = 0V, ID = -250A | ||
| △V(BR)DSS/△TJ Breakdown Voltage Temp. Coefficient | -0.009 | V/C | Reference to 25C, ID = -1mA | ||
| RDS(on) Static Drain-to-Source On-Resistance | 0.050 | 0.065 | Ω | VGS = -4.5V, ID = -3.7A | |
| RDS(on) Static Drain-to-Source On-Resistance | 0.080 | 0.135 | Ω | VGS = -2.5V, ID = -3.1A | |
| VGS(th) Gate Threshold Voltage | -0.40 | -1.2 | V | VDS = VGS, ID = -250A | |
| gfs Forward Transconductance | 6.0 | S | VDS = -10V, ID = -3.7A | ||
| IDSS Drain-to-Source Leakage Current | -1.0 | µA | VDS = -20V, VGS = 0V | ||
| IDSS Drain-to-Source Leakage Current | -25 | µA | VDS = -20V, VGS = 0V, TJ = 70C | ||
| IGSS Gate-to-Source Forward Leakage | -100 | nA | VGS = -12V | ||
| IGSS Gate-to-Source Reverse Leakage | 100 | nA | VGS = 12V | ||
| Qg Total Gate Charge | 8.0 | 12 | nC | ID = -3.7A, VDS = -10V | |
| Qgs Gate-to-Source Charge | 1.2 | 1.8 | nC | VGS = -5.0V | |
| Qgd Gate-to-Drain ("Miller") Charge | 2.8 | 4.2 | nC | ||
| td(on) Turn-On Delay Time | 350 | ns | VDD = -10V, ID = -3.7A, RG = 89 | ||
| tr Rise Time | 48 | ns | |||
| td(off) Turn-Off Delay Time | 588 | ns | |||
| tf Fall Time | 381 | ns | RD = 2.7 | ||
| Ciss Input Capacitance | 633 | pF | VGS = 0V, VDS = -10V, = 1.0MHz | ||
| Coss Output Capacitance | 145 | pF | |||
| Crss Reverse Transfer Capacitance | 110 | pF | |||
| IS Continuous Source Current | -1.3 | A | Repetitive rating; pulse width limited by max. junction temperature. | ||
| ISM Pulsed Source Current (Body Diode) | -22 | A | Pulse width 400s; duty cycle 2%. | ||
| VSD Diode Forward Voltage | -1.2 | V | TJ = 25C, IS = -1.0A, VGS = 0V | ||
| trr Reverse Recovery Time | 29 | 43 | ns | TJ = 25C, IF = -1.0A, di/dt = -100A/s | |
| Qrr Reverse Recovery Charge | 11 | 17 | nC |
2410121844_Guangdong-Hottech-IRLML6402_C2886430.pdf
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