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quality 100V Drain Source Voltage N Channel MOSFET HUASHUO HSBA045N10 for Synchronous Rectification Circuits factory
quality 100V Drain Source Voltage N Channel MOSFET HUASHUO HSBA045N10 for Synchronous Rectification Circuits factory

100V Drain Source Voltage N Channel MOSFET HUASHUO HSBA045N10 for Synchronous Rectification Circuits

Key Attributes
Model Number: HSBA045N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
74pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
2.925nF
Input Capacitance(Ciss):
2.925nF@50V
Pd - Power Dissipation:
170W
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
HSBA045N10
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA045N10 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 100V drain-source voltage and a super low RDS(ON), this device is ideal for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. It offers guaranteed 100% EAS performance and is available as a Green Device, utilizing advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Availability: Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V 1,6 120 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 1,6 80 A
IDM Pulsed Drain Current 2 480 A
EAS Single Pulse Avalanche Energy 3 525 mJ
PD@TC=25 Total Power Dissipation 4 170 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient 1 --- 62 /W
RJC Thermal Resistance Junction-Case 1 --- 0.72 /W
Product Summary
VDS = 100 V, ID = 120 A RDS(ON),typ = 4.5 m
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=20A --- 4.5 6.0 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V
IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25 --- --- 1 uA
VDS=100V , VGS=0V , TJ=125 --- --- 10 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=10V , ID=20A --- 26.5 --- S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=20A --- 46 --- nC
Qgs Gate-Source Charge --- 13 ---
Qgd Gate-Drain Charge --- 9.5 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.0, ID=20A --- 25 --- ns
Tr Rise Time --- 6.8 ---
Td(off) Turn-Off Delay Time --- 35 ---
Tf Fall Time --- 7.5 ---
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 2925 --- pF
Coss Output Capacitance --- 1509 ---
Crss Reverse Transfer Capacitance --- 74 ---
Diode Characteristics
IS Continuous Source Current 1,5 VG=VD=0V , Force Current --- --- 120 A
VSD Diode Forward Voltage 2 VGS=0V , IS=20A , TJ=25 --- --- 1.2 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 --- 49 --- nS
Qrr Reverse Recovery Charge --- 54 --- nC

Notes:

  • 1. Data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  • 2. Data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. EAS data shows Max. rating. Test condition: VDD=100V, VGS=10V, L=0.5mH.
  • 4. Power dissipation is limited by 150 junction temperature.
  • 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
  • 6. Package limitation current.

2410122017_HUASHUO-HSBA045N10_C28314520.pdf

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