40V N Channel MOSFET HUASHUO HSBA4050A Fast Switching Device for High Current SMPS and DC DC Converter
Key Attributes
Model Number:
HSBA4050A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 N-channel
Output Capacitance(Coss):
1.719nF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
-
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
HSBA4050A
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4050A is a N-Channel, 40V fast switching MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and 100% UIS tested performance. This MOSFET is suitable for Synchronous Rectification in SMPS, DC/DC Converters, and Or-ing applications. It is RoHS and Halogen-Free compliant.
Product Attributes
- Brand: HS-Semi
- Type: N-Channel MOSFET
- Voltage Rating: 40V
- Switching Speed: Fast
- Compliance: RoHS and Halogen-Free
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 110 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 80 | A | |||
| IDM | Pulsed Drain Current2 | 440 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 380 | mJ | |||
| IAS | Avalanche Current | 50 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 100 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient1 | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.3 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | --- | 2.2 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2 | --- | 4 | V |
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=55 | --- | 5 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=20A | 61 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.9 | ||
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=20A | --- | 52 | nC | |
| Qgs | Gate-Source Charge | --- | 11 | nC | ||
| Qgd | Gate-Drain Charge | --- | 7.5 | nC | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=20A | --- | 16 | ns | |
| Tr | Rise Time | --- | 7.5 | ns | ||
| Td(off) | Turn-Off Delay Time | --- | 48 | ns | ||
| Tf | Fall Time | --- | 13.6 | ns | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 3572 | pF | |
| Coss | Output Capacitance | --- | 1719 | pF | ||
| Crss | Reverse Transfer Capacitance | --- | 102 | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,6 | VG=VD=0V , Force Current | --- | 110 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | --- | 44 | ns | |
| Qrr | Reverse Recovery Charge | --- | 33 | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH, IAS=50A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current is 100A.
2411061707_HUASHUO-HSBA4050A_C42376804.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
