N channel Power MOSFET Guangdong Hottech HKTD5N20 with High Density Cell Design and 0.6 Ohm Maximum RDS
Key Attributes
Model Number:
HKTD5N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
5A
RDS(on):
600mΩ@10V,2.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.3pF
Number:
1 N-channel
Input Capacitance(Ciss):
255pF
Pd - Power Dissipation:
78W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
HKTD5N20
Package:
TO-252
Product Description
Product Overview
This N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and is characterized by its 200V drain-source voltage and 5A continuous drain current. Designed for efficient power switching applications, it offers a maximum RDS(ON) of 0.6 at VGS=10V and is fully characterized for avalanche energy.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D5N20
- Model Number: HKTD5N20
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| MAXIMUM RATINGS | ||||||
| Drain-source voltage | VDS | 200 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current, VGS=10 | ID | 5 | A | |||
| Pulsed drain current (Note 1) | IDM | 20 | A | |||
| Power dissipation | PD | 78 | W | |||
| Single Pulsed Avalanche Energy (note 1) | EAS | 125 | mJ | VDD=20V,L=0.5mH, RG=25, Starting TJ = 25C | ||
| Lead Temperature for Soldering Purposes (1/8 from case for 10s) | TL | 260 | C | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source breakdown voltage | V(BR)DS | 200 | V | VGS=0V,ID=250A | ||
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=200V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th) | 2.0 | 4.0 | V | VDS=VGS, ID=250A | |
| Drain-source on-resistance | RDS(ON) | 0.57 | 0.6 | VGS=10V,ID= 2.5A | ||
| Forward transconductance | gFS | 5 | S | VDS=30V,ID=2.5A | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | 255 | pF | VGS=0V VDS=25V f=1.0MHz | ||
| Output capacitance | Coss | 30.2 | pF | |||
| Reverse transfer capacitance | Crss | 2.3 | pF | |||
| Switching characteristics | ||||||
| Turn-on delay time | td(on) | 7.3 | ns | VDD=100V ID=5 A RG=10 VGS=10V | ||
| Turn-on rise time | tr | 10.7 | ns | |||
| Turn-off delay time | td(off) | 18.2 | ns | |||
| Turn-off fall time | tf | 11.9 | ns | |||
| Total gate charge | Qg | 10.8 | nC | VDS=160V, VGS=10V | ||
| Gate-source charge | Qgs | 1.7 | nC | |||
| Gate-drain charge | Qgd | 3.1 | nC | |||
| Drain-source diode characteristics | ||||||
| Diode forward voltage | VSD | 2 | V | ID=5A, IS=5A, VGS=0V | ||
| Max. forward current | IS | 5 | A | |||
| Pulsed drain-source diode forward current | ISM | 20 | A | |||
2410121849_Guangdong-Hottech-HKTD5N20_C5364286.pdf
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