power management device Guangdong Hottech HKTQ50N03 low voltage N channel MOSFET with PDFN3333 package
Key Attributes
Model Number:
HKTQ50N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
8.5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
110pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
37W
Input Capacitance(Ciss):
940pF@15V
Gate Charge(Qg):
9.8nC@10V
Mfr. Part #:
HKTQ50N03
Package:
PDFN3333-8
Product Description
Product Overview
The HKTQ50N03 is a low voltage N-channel MOSFET designed for efficient power management. It features ultra-low on-resistance and is suitable for low power DC-to-DC converter and load switch applications. The device is housed in a PDFN3333 surface mount package.
Product Attributes
- Brand: HKT (Shenzhen Hottech Electronics Co., Ltd)
- Origin: China
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Marking: Q50N03
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | @TC=25 | 50 | A | ||
| @TC=100 | 30 | A | ||||
| IDM | Pulsed Drain Current | 112 | A | |||
| EAS | Single Pulse Avalanche Energy | 24 | mJ | |||
| IAS | Avalanche Current | 22 | A | |||
| PD | Total Power Dissipation | @TC=25 | 37 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10 V , ID=20A | 6.8 | 8.5 | m | |
| VGS=4.5V , ID=20A | 9.3 | 14 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 3.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=30V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=24V , VGS=0V , TJ=125 | 10 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | ±100 | nA | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.8 | |||
| Qg | Total Gate Charge | VDS=15V , VGS=10V , ID=20A | 9.8 | nC | ||
| Qgs | Gate-Source Charge | 4.2 | ||||
| Qgd | Gate-Drain Charge | 3.6 | ||||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3, ID=15A | 4 | ns | ||
| Tr | Rise Time | 8 | ||||
| Td(off) | Turn-Off Delay Time | 30 | ||||
| Tf | Fall Time | 4 | ||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 940 | pF | ||
| Coss | Output Capacitance | 130 | ||||
| Crss | Reverse Transfer Capacitance | 110 |
2410121807_Guangdong-Hottech-HKTQ50N03_C5364300.pdf
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