P Channel Low Voltage MOSFET Guangdong Hottech SI2303 Designed for Load Switching and Power Control
Key Attributes
Model Number:
SI2303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-
RDS(on):
330mΩ@4.5V,1.4A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 P-Channel
Input Capacitance(Ciss):
155pF
Output Capacitance(Coss):
35pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SI2303
Package:
SOT-23
Product Description
Product Overview
This P-Channel Low Voltage MOSFET, model SI2303, is designed for low power DC to DC converter and load switch applications. It features a low on-resistance, making it an efficient component for power management. The device is a surface mount component housed in a SOT-23 package.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-30V, VGS=0V |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Gate-Threshold Voltage | VGS(th) | -1, -1.6, -3 | V | VDS=VGS, ID=-250A |
| Drain-Source On-Resistance | RDS(ON) | 75, 190 | m | VGS=-10V, ID=-1.9A |
| Drain-Source On-Resistance | RDS(ON) | 115, 330 | m | VGS=-4.5V, ID=-1.4A |
| Forward Transconductance | gFS | 1 | S | VDS=-5V, ID=-1.9A |
| Gate Resistance | Rg | 1.7, 8.5, 17 | f=1MHz | |
| Input Capacitance | Ciss | 155 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 35 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Turn-on Delay Time | td(on) | 4, 8 | nS | VDD=-15V,ID=-1.5A, VGEN=-10V,Rg=1,RL=10 |
| Turn-on Rise Time | tr | 11, 18 | nS | VDD=-15V,ID=-1.5A, VGEN=-10V,Rg=1,RL=10 |
| Turn-off Delay Time | td(off) | 11, 18 | nS | VDD=-15V,ID=-1.5A, VGEN=-10V,Rg=1,RL=10 |
| Turn-off Fall Time | tf | 8, 16 | nS | VDD=-15V,ID=-1.5A, VGEN=-10V,Rg=1,RL=10 |
| Turn-on Delay Time | td(on) | 36, 44 | nS | VDD=-15V,ID=-1.5A, VGEN=-4.5V,Rg=1,RL=10 |
| Turn-on Rise Time | tr | 37, 45 | nS | VDD=-15V,ID=-1.5A, VGEN=-4.5V,Rg=1,RL=10 |
| Turn-off Delay Time | td(off) | 12, 18 | nS | VDD=-15V,ID=-1.5A, VGEN=-4.5V,Rg=1,RL=10 |
| Turn-off Fall Time | tf | 9, 14 | nS | VDD=-15V,ID=-1.5A, VGEN=-4.5V,Rg=1,RL=10 |
| Total Gate Charge | Qg | 4, 8 | nC | VDD=-15V,VGS=-10V,ID=-1.9A |
| Total Gate Charge | Qg | 2, 4 | nC | VDD=-15V,VGS=-4.5V,ID=-1.9A |
| Gate-Source Charge | Qgs | 0.6 | nC | VDD=-15V,VGS=-10V,ID=-1.9A |
| Gate-Drain Charge | Qgd | 1 | nC | VDD=-15V,VGS=-10V,ID=-1.9A |
| Diode Forward Voltage | VSD | -0.8, -1.2 | V | IS=-1.5A, VGS=0V |
| Diode Forward Current | IS | -1.3 | A | TC = 25°C |
| Pulse Diode Forward Current | ISM | -10 | A | TC = 25°C |
| Continuous Drain Current | ID | -1.9 | A | TA = 25°C |
| Continuous Source-Drain Diode Current | IS | -0.83 | A | TA = 25°C |
| Power Dissipation | PD | 0.35 | W | TA = 25°C |
| Thermal Resistance Junction to Ambient | RJA | 357 | °C/W | TA = 25°C |
| Junction Temperature | TJ | 150 | °C | |
| Storage Temperature | TSTG | -55 ~+150 | °C |
2108131730_Guangdong-Hottech-SI2303_C189812.pdf
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