Hangzhou Silan Microelectronics SVF14N65CFJ MOSFET Featuring F Cell Structure for Power Electronics
Key Attributes
Model Number:
SVF14N65CFJ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
600mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
6.2pF@520V
Number:
1 N-channel
Input Capacitance(Ciss):
1.67nF@25V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
32.5nC@10V
Mfr. Part #:
SVF14N65CFJ
Package:
TO-220
Product Description
Product Overview
The SVF14N65CFJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced process and cell structure are optimized for low on-state resistance, superior switching performance, and enhanced avalanche and commutation mode energy handling. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF14N65CFJ
- Package: TO-220FJ-3L
- Marking: 14N65CFJ
- Hazardous Substance Control: Halogen free
- Packing Type: Tube
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Technical Specifications
| Characteristics | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| On State Resistance | RDS(on) | VGS=10V, ID=7.0A | -- | 0.60 | 0.70 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 1670 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 169 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 6.2 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=325V, ID=14A, RG=24 | -- | 25.80 | -- | ns |
| Turn-on Rise Time | tr | VDD=325V, ID=14A, RG=24 | -- | 44.60 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=325V, ID=14A, RG=24 | -- | 88.53 | -- | ns |
| Turn-off Fall Time | tf | VDD=325V, ID=14A, RG=24 | -- | 44.40 | -- | ns |
| Total Gate Charge | Qg | VDS=520V, ID=14A, VGS=10V | -- | 32.5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=520V, ID=14A, VGS=10V | -- | 11.6 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=520V, ID=14A, VGS=10V | -- | 12.3 | -- | nC |
| Continuous Source Current | IS | -- | -- | -- | 14 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 56 | A |
| Diode Forward Voltage | VSD | IS=14A, VGS=0V | -- | -- | 1.3 | V |
| Reverse Recovery Time | Trr | IS=14A, VGS=0V, dIF/dt=100A/S | -- | 570 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=14A, VGS=0V, dIF/dt=100A/S | -- | 6.01 | -- | C |
| Drain-Source Voltage | VDS | -- | -- | -- | 650 | V |
| Gate-Source Voltage | VGS | -- | -- | 30 | -- | V |
| Drain Current | ID | TC=25C | -- | -- | 14 | A |
| Drain Current | ID | TC=100C | -- | -- | 8.9 | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 56 | A |
| Power Dissipation | PD | TC=25C | -- | -- | 45 | W |
| Power Dissipation Derating | -- | Above 25C | -- | -- | 0.36 | W/C |
| Single Pulsed Avalanche Energy | EAS | -- | -- | -- | 820 | mJ |
| Operation Junction Temperature Rating | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Rating | Tstg | -- | -55 | -- | +150 | C |
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | 2.78 | -- | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | 62.5 | -- | C/W |
2501091111_Hangzhou-Silan-Microelectronics-SVF14N65CFJ_C601615.pdf
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