Power MOSFET gate driver and switching device Guangdong Hottech BSS123 N channel MOSFET in SOT 23 package
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
RDS(on):
6Ω@10V,0.17A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
60pF@25V
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The BSS123 is a high voltage N-channel MOSFET designed for various switching applications. It features a high-density cell design for extremely low RDS(ON), making it suitable for small servo motor controls, power MOSFET gate drivers, and general switching applications. This surface mount device comes in a SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Model: BSS123
- Package: SOT-23
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 100 | V | |
| Gate-source voltage | VGS | ±20 | V | |
| Continuous drain current | ID | 0.17 | A | |
| Pulsed drain current | IDM | 0.68 | A | |
| Continuous Source-Drain Diode Current | IS | 0.17 | A | |
| Power dissipation | PD | 0.35 | W | |
| Thermal resistance from Junction to ambient | RθJA | 357 | °C/W | |
| Junction temperature | TJ | 150 | °C | |
| Storage temperature | TSTG | -55 ~+150 | °C | |
| Lead Temperature for Soldering Purposes | TL | 260 | °C | (1/8 from case for 10 s) |
| Drain-Source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=100V, VGS=0V |
| Zero gate voltage drain current | IDSS | 10 | nA | VDS=20V, VGS=0V |
| Gate-body leakage current | IGSS | ±50 | nA | VDS=0V, VGS=±20V |
| Gate-threshold voltage | VGS(th) | 1 ~ 2.8 | V | VDS=VGS, ID=250μA |
| Drain-source on-resistance | RDS(ON) | 6 | Ω | VGS=10V, ID=0.17A |
| Drain-source on-resistance | RDS(ON) | 10 | Ω | VGS=4.5V, ID=0.17A |
| Forward trans-conductance | gFS | 80 | mS | VDS=10V, ID=0.17A |
| Diode forward voltage | VSD | 1.4 | V | IS=0.34A, VGS=0V |
2410121946_Guangdong-Hottech-BSS123_C5190145.pdf
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