Fast switching MOSFET HUASHUO HSL0107 P channel 100V with high cell density trench technology and low RDS
Key Attributes
Model Number:
HSL0107
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
553pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
HSL0107
Package:
SOT-223
Product Description
Product Overview
The HSL0107 is a P-channel, 100V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for small power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a green version. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|---|
| HSL0107 | Drain-Source Voltage (VDS) | -100 | V | ||||
| Gate-Source Voltage (VGS) | ±20 | V | |||||
| Continuous Drain Current (ID@TA=25) | VGS @ -10V1 | -1.5 | A | ||||
| Continuous Drain Current (ID@TA=70) | VGS @ -10V1 | -1.2 | A | ||||
| Pulsed Drain Current (IDM)2 | -4.5 | A | |||||
| Total Power Dissipation (PD@TA=25)3 | 1.5 | W | |||||
| Storage Temperature Range (TSTG) | -55 | 150 | |||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | |||||
| Thermal Resistance Junction-ambient (RJA)1 | --- | 85 | /W | ||||
| Thermal Resistance Junction-Case (RJC)1 | --- | 36 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -100 | --- | --- | V | ||
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-10V , ID=-1A | --- | 0.52 | 0.65 | Ω | ||
| HSL0107 | Static Drain-Source On-Resistance (RDS(ON))2 | VGS=-4.5V , ID=-0.5A | --- | 0.56 | 0.7 | Ω | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V | ||
| HSL0107 | Drain-Source Leakage Current (IDSS) | VDS=-80V , VGS=0V , TJ=25 | --- | 10 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=-80V , VGS=0V , TJ=55 | --- | 100 | uA | |||
| HSL0107 | Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | --- | ±100 | nA | ||
| Total Gate Charge (Qg) | VDS=-15V , VGS=-4.5V , ID=-0.5A | --- | 4.5 | --- | nC | ||
| HSL0107 | Input Capacitance (Ciss) | VDS=-15V , VGS=0V , f=1MHz | --- | 553 | pF | ||
| Output Capacitance (Coss) | --- | 29 | --- | pF | |||
| Reverse Transfer Capacitance (Crss) | --- | 20 | --- | pF | |||
| HSL0107 | Continuous Source Current (IS)1,4 | VG=VD=0V , Force Current | --- | --- | -1.5 | A | |
| Pulsed Source Current (ISM)2,4 | --- | --- | -4.5 | A | |||
| HSL0107 | Diode Forward Voltage (VSD)2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1.2 | V |
2410121447_HUASHUO-HSL0107_C2828485.pdf
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