High Current N Channel and P Channel MOSFETs HUASHUO HSBB6903 Series with Synchronous Rectification Feature
Key Attributes
Model Number:
HSBB6903
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5.5A;4A
RDS(on):
75mΩ@10V,3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
46pF@15V;70pF@15V
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.031nF@48V;1.444nF@48V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
19nC@4.5V;9.7nC@4.5V
Mfr. Part #:
HSBB6903
Package:
PRPAK3x3-8L
Product Description
Product Overview
The HSBB6903 series comprises N-Channel and P-Channel Fast Switching MOSFETs designed with Advanced Trench MOS Technology. These devices offer high current and high-speed switching capabilities, making them suitable for applications like motor control and portable equipment. Key features include 100% EAS Guaranteed and availability of Green Device options. Synchronous rectification is also supported.
Product Attributes
- Brand: HS-Semi
- Technology: Advanced Trench MOS
- Device Type: N-Channel and P-Channel MOSFETs
- Features: 100% EAS Guaranteed, Green Device Available, Synchronous Rectification
Technical Specifications
| Model | Parameter | Conditions | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| HSBB6903 (N-Ch) | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25, VGS @ 10V) | 5.5 | A | ||||
| Continuous Drain Current (ID@TA=70, VGS @ 10V) | 4 | A | ||||
| Pulsed Drain Current (IDM) | 20 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 22 | mJ | ||||
| Avalanche Current (IAS) | 21 | A | ||||
| Total Power Dissipation (PD@TA=25) | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=5A | 38 | 50 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=4A | 45 | 70 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 2.5 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | |||
| HSBB6903 (P-Ch) | Drain-Source Voltage (VDS) | -60 | V | |||
| Gate-Source Voltage (VGS) | 20 | V | ||||
| Continuous Drain Current (ID@TA=25, VGS @ 10V) | -4 | A | ||||
| Continuous Drain Current (ID@TA=70, VGS @ 10V) | -3.2 | A | ||||
| Pulsed Drain Current (IDM) | -14 | A | ||||
| Single Pulse Avalanche Energy (EAS) | 29 | mJ | ||||
| Avalanche Current (IAS) | -24 | A | ||||
| Total Power Dissipation (PD@TA=25) | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -60 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-10V , ID=-3A | 75 | 100 | m | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=-4.5V , ID=-3A | 90 | 120 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | -2.5 | A | |||
| Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V |
2410121503_HUASHUO-HSBB6903_C5128203.pdf
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