TO220FJ Package N Channel MOSFET Hangzhou Silan Microelectronics SVF10N65CFJ Ideal for DC DC Converters and Motor Drivers
Key Attributes
Model Number:
SVF10N65CFJ
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
800mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
SVF10N65CFJ
Package:
TO-220FJ-3L
Product Description
Product Overview
The SVF10N65CFJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced design offers reduced on-state resistance, superior switching performance, and enhanced robustness against high energy pulses in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Part Number: SVF10N65CFJ
- Package: TO-220FJ-3L
- Marking: 10N65CFJ
- Hazardous Substance Control: Halogen free
- Packing Type: Tube
Technical Specifications
| Characteristics | Symbol | Ratings | Unit | Test Conditions | Min. | Typ. | Max. | |
| ABSOLUTE MAXIMUM RATINGS | ||||||||
| Drain-Source Voltage | VDS | 650 | V | |||||
| Gate-Source Voltage | VGS | ±30 | V | |||||
| Drain Current (TC = 25°C) | ID | 10 | A | |||||
| Drain Current (TC = 100°C) | ID | 6.3 | A | |||||
| Drain Current Pulsed | IDM | 40 | A | |||||
| Power Dissipation (TC=25°C) | PD | 50 | W | |||||
| Derate above 25°C | 0.4 | W/°C | ||||||
| Single Pulsed Avalanche Energy (Note 1) | EAS | 618 | mJ | |||||
| Reverse diode dv/dt (Note 2) | dv/dt | 4.5 | V/ns | |||||
| MOSFET dv/dt ruggedness (Note 3) | dv/dt | 50 | V/ns | |||||
| Operation Junction Temperature Range | TJ | -55+150 | °C | |||||
| Storage Temperature Range | Tstg | -55+150 | °C | |||||
| THERMAL CHARACTERISTICS | ||||||||
| Thermal Resistance, Junction-to-Case | RθJC | °C/W | 2.5 | |||||
| Thermal Resistance, Junction-to-Ambient | RθJA | °C/W | 62.5 | |||||
| ELECTRICAL CHARACTERISTICS | ||||||||
| Drain -Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 650 | |||
| Drain-Source Leakage Current | IDSS | µA | VDS=650V, VGS=0V | 1.0 | ||||
| Gate-Source Leakage Current | IGSS | nA | VGS=±30V, VDS=0V | ±100 | ||||
| Gate Threshold Voltage | VGS(th) | 2.0 | V | VGS= VDS, ID=250µA | 2.0 | 4.0 | ||
| Static Drain- Source On State Resistance | RDS(on) | 0.8 | Ω | VGS=10V, ID=5.0A | 0.80 | 1.0 | ||
| Gate resistance | Rg | Ω | f=1.0MHz | 5.0 | ||||
| Input Capacitance | Ciss | pF | VDS=25V,VGS=0V, f=1.0MHz | 1100 | ||||
| Output Capacitance | Coss | pF | 130 | |||||
| Reverse Transfer Capacitance | Crss | pF | 13 | |||||
| Turn-on Delay Time | td(on) | ns | VDD=325V, ID=10A, RG=25Ω (Note 4,5) | 21 | ||||
| Turn-on Rise Time | tr | ns | 41 | |||||
| Turn-off Delay Time | td(off) | ns | 82 | |||||
| Turn-off Fall Time | tf | ns | 43 | |||||
| Total Gate Charge | Qg | nC | VDS=520V,ID=10A, VGS=10V (Note 4,5) | 29 | ||||
| Gate-Source Charge | Qgs | nC | 6.2 | |||||
| Gate-Drain Charge | Qg d | nC | 13 | |||||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||||
| Continuous Source Current | IS | A | Integral Reverse p-n Junction Diode in the MOSFET | 10 | ||||
| Pulsed Source Current | ISM | A | 40 | |||||
| Diode Forward Voltage | VSD | V | IS=10A,VGS=0V | 1.3 | ||||
| Reverse Recovery Time | Trr | ns | IS=10A,VGS=0V, dIF/dt=100A/µS (Note 4) | 561 | ||||
| Reverse Recovery Charge | Qrr | µC | 4.3 | |||||
2501091110_Hangzhou-Silan-Microelectronics-SVF10N65CFJ_C2897706.pdf
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