N Channel MOSFET Hangzhou Silan Microelectronics SVF7N80F Designed for AC DC and DC DC Power Systems
Key Attributes
Model Number:
SVF7N80F
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.7pF
Number:
1 N-channel
Output Capacitance(Coss):
104pF
Input Capacitance(Ciss):
1.087nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SVF7N80F
Package:
TO-220F-3
Product Description
Silan Microelectronics SVF7N80T/F/KL/K/FD N-CHANNEL MOSFET
The SVF7N80T/F/KL/K/FD is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drives.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free
Technical Specifications
| Part No. | Package | 7A, 800V | RDS(on)(typ.)@VGS=10V | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @TC=25C | Drain Current (ID) @TC=100C | Power Dissipation (PD) @TC=25C | Single Pulsed Avalanche Energy (EAS) | Operation Junction Temperature Range (TJ) | Storage Temperature Range (Tstg) | Thermal Resistance, Junction-to-Case (RJC) | Thermal Resistance, Junction-to-Ambient (RJA) | Drain-Source Breakdown Voltage (BVDSS) | Drain-Source Leakage Current (IDSS) | Gate-Source Leakage Current (IGSS) | Gate Threshold Voltage (VGS(th)) | Static Drain- Source On State Resistance (RDS(on)) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(on)) | Turn-on Rise Time (tr) | Turn-off Delay Time (td(off)) | Turn-off Fall Time (tf) | Total Gate Charge (Qg) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qg) | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD) | Reverse Recovery Time (Trr) | Reverse Recovery Charge (Qrr) |
| SVF7N80T | TO-220-3L | 7A, 800V | 1.39 | 800V | 30V | 7.0A | 4.4A | 154W | 534mJ | -55+150C | -55+150C | 0.81C/W | 62.5C/W | 800V | 1.0A | 100nA | 2.04.0V | 1.41.6 | 1087pF | 104pF | 5.7pF | 34ns | 72ns | 63ns | 35ns | 23nC | 7.0nC | 9.0nC | 7.0A | 28A | 1.4V | 590ns | 3.9C |
| SVF7N80F/FD | TO-220F-3L / TO-220FD-3L | 7A, 800V | 1.39 | 800V | 30V | 7.0A | 4.4A | 50W | 534mJ | -55+150C | -55+150C | 2.50C/W | 62.5C/W | 800V | 1.0A | 100nA | 2.04.0V | 1.41.6 | 1087pF | 104pF | 5.7pF | 34ns | 72ns | 63ns | 35ns | 23nC | 7.0nC | 9.0nC | 7.0A | 28A | 1.4V | 590ns | 3.9C |
| SVF7N80KL/K | TO-262L-3L / TO-262-3L | 7A, 800V | 1.39 | 800V | 30V | 7.0A | 4.4A | 150W | 534mJ | -55+150C | -55+150C | 0.83C/W | 62.5C/W | 800V | 1.0A | 100nA | 2.04.0V | 1.41.6 | 1087pF | 104pF | 5.7pF | 34ns | 72ns | 63ns | 35ns | 23nC | 7.0nC | 9.0nC | 7.0A | 28A | 1.4V | 590ns | 3.9C |
2501091111_Hangzhou-Silan-Microelectronics-SVF7N80F_C68779.pdf
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