600V 2A MOSFET Hangzhou Silan Microelectronics SVF2N60RMJ TO251J Package for AC DC and DC DC Power Systems
Key Attributes
Model Number:
SVF2N60RMJ
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
250pF
Pd - Power Dissipation:
34W
Gate Charge(Qg):
8.9nC@10V
Mfr. Part #:
SVF2N60RMJ
Package:
TO-251
Product Description
Product Overview
The SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance reduction, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free
Technical Specifications
| Part Number | Package | Marking | VDS (V) | ID (A) @ TC=25C | RDS(on) (typ) @ VGS=10V () | EAS (mJ) | dv/dt (V/ns) | TJ (C) | RJC (C/W) |
| SVF2N60RD | TO-252-2L | 2N60RD | 600 | 2.0 | 3.7 | 115 | 4.5 (Reverse Diode) / 50 (MOSFET) | -55+150 | 3.7 |
| SVF2N60RM | TO-251D-3L | 2N60RM | 600 | 2.0 | 3.7 | 115 | 4.5 (Reverse Diode) / 50 (MOSFET) | -55+150 | 3.7 |
| SVF2N60RMJ | TO-251J-3L | 2N60RMJ | 600 | 2.0 | 3.7 | 115 | 4.5 (Reverse Diode) / 50 (MOSFET) | -55+150 | 3.7 |
2501091111_Hangzhou-Silan-Microelectronics-SVF2N60RMJ_C601625.pdf
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