Dual N channel fast switching MOSFET HUASHUO HSW2N10D featuring excellent RDS ON and power switching
Key Attributes
Model Number:
HSW2N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@50V
Number:
2 N-Channel
Input Capacitance(Ciss):
330pF@50V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
5.5nC@10V
Mfr. Part #:
HSW2N10D
Package:
SOT-23-6L
Product Description
Product Overview
The HSW2N10D is a dual N-channel fast switching MOSFET featuring high cell density and trenched technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements with full functional reliability approval. It is ideal for PWM applications and load switching.
Product Attributes
- Brand: HSW
- Product Type: Dual N-CH Fast Switching MOSFETs
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 2 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 1.6 | A | |||
| IDM | Pulsed Drain Current2 | 8 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.7 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | --- | 100 | /W | ||
| Product Summary | ||||||
| Model | HSW2N10D | |||||
| Type | Dual N-CH Fast Switching MOSFETs | |||||
| VDS | Drain-Source Voltage | 100 | V | |||
| RDS(ON),Max | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A2 | 220 | 260 | m | |
| ID | Continuous Drain Current | 2 | A | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=2A2 | 220 | 260 | m | |
| VGS=2.5V , ID=1.5A | 240 | 280 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.4 | 2.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=100V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=1A | 33 | --- | S | |
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=1A | 5.5 | --- | nC | |
| Qgs | Gate-Source Charge | 0.9 | --- | |||
| Qgd | Gate-Drain Charge | 1.3 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=4.5V , RG=6 , ID=1A | 5.5 | --- | ns | |
| Tr | Rise Time | 11 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 11 | --- | ns | ||
| Tf | Fall Time | 6 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 330 | --- | pF | |
| Coss | Output Capacitance | 11 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 13 | --- | pF | ||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
Notes:
1The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2The data tested by pulsed, pulse width ≤300us, duty cycle ≤2%.
3The power dissipation is limited by 150 junction temperature.
4The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2410122027_HUASHUO-HSW2N10D_C28314507.pdf
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