Compact SOT23 High Diode S8050 Transistor Offering Stable Electrical Characteristics for Electronics
Key Attributes
Model Number:
S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050
Package:
SOT-23
Product Description
Product Overview
The S8050 is a high-performance NPN bipolar transistor from High Diode Semiconductor, designed for general-purpose applications. Packaged in a compact SOT-23, it offers excellent characteristics for various electronic circuits.
Product Attributes
- Brand: High Diode Semiconductor
- Complimentary to: S8550
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCBO | Collector-Base Voltage | IC= 100A, IE=0 | 40 | V | ||
| VCEO | Collector-Emitter Voltage | IC=1mA, IB=0 | 25 | V | ||
| VEBO | Emitter-Base Voltage | IE=100A, IC=0 | 5 | V | ||
| IC | Collector Current | 500 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC= 100A, IE=0 | 40 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 25 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 5 | V | ||
| ICBO | Collector cut-off current | VCB=40 V , IE=0 | 0.1 | A | ||
| ICEO | Collector cut-off current | VCB=20V , IE=0 | 0.1 | A | ||
| IEBO | Emitter cut-off current | VEB= 5V , IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=1V, IC= 50mA | 120 | 400 | ||
| hFE(2) | DC current gain | VCE=1V, IC= 500mA | 50 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 0.6 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500 mA, IB= 50mA | 1.2 | V | ||
| fT | Transition frequency | VCE=6V, IC= 20mA, f=30MHz | 150 | MHz |
2410121317_High-Diode-S8050_C466625.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
