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quality P Channel 100V MOSFET HUASHUO HSU0115 with Fast Switching and 100 Percent EAS Guaranteed Reliability factory
quality P Channel 100V MOSFET HUASHUO HSU0115 with Fast Switching and 100 Percent EAS Guaranteed Reliability factory

P Channel 100V MOSFET HUASHUO HSU0115 with Fast Switching and 100 Percent EAS Guaranteed Reliability

Key Attributes
Model Number: HSU0115
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
76pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.029nF@20V
Pd - Power Dissipation:
54W
Gate Charge(Qg):
44.5nC@10V
Mfr. Part #:
HSU0115
Package:
TO-252-2
Product Description

Product Overview

The HSU0115 is a P-Channel 100V Fast Switching MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide variety of applications. This MOSFET meets RoHS and Green Product requirements, and is 100% EAS guaranteed with full function reliability approval. Key features include 100% EAS Guaranteed, Green Device availability, Super Low Gate Charge, and excellent CdV/dt effect decline.

Product Attributes

  • Brand: HS-Semi
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed
  • Technology: Advanced trench MOSFET

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -18 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -12 A
IDM Pulsed Drain Current -75 A
EAS Single Pulse Avalanche Energy 157.2 mJ
IAS Avalanche Current 18.9 A
PD@TC=25 Total Power Dissipation 54 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient 62 /W
RJC Thermal Resistance Junction-Case (Note 1) 2.3 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 V
RDS(ON),typ Static Drain-Source On-Resistance VGS=-10V , ID=-10A (Note 2) 78 95 m
RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-8A (Note 2) 86 110 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.7 -2.5 V
IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25 -50 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=-10V , ID=-10A 24 S
Qg Total Gate Charge VDS=-50V , VGS=-10V , ID=-20A 44.5 nC
Qgs Gate-Source Charge 9.13 nC
Qgd Gate-Drain Charge 5.93 nC
Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3, ID=-10A 12 ns
Tr Rise Time 27.4 ns
Td(off) Turn-Off Delay Time 79 ns
Tf Fall Time 53.6 ns
Ciss Input Capacitance VDS=-20V , VGS=0V , f=1MHz 3029 pF
Coss Output Capacitance 129 pF
Crss Reverse Transfer Capacitance 76 pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current (Note 1, 5) -18 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 (Note 2) -1.2 V
trr Reverse Recovery Time IF=-8A , di/dt=-100A/s , TJ=25 38.7 nS
Qrr Reverse Recovery Charge 22.4 nC
Ordering Information
Part Number Package code Packaging
HSU0115 TO252-2 2500/Tape&Reel

Notes:

  • 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  • 3. The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.88mH, IAS=-18.9A.
  • 4. The power dissipation is limited by 150 junction temperature.
  • 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2410121656_HUASHUO-HSU0115_C701016.pdf

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