Medium power transistor High Diode MMBT5401 NPN type in SOT23 package for switching and amplification
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a high diode semiconductor transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOT-23
- Transistor Type: NPN
- Classification: Plastic-Encapsulate Transistors
- Complementary to: MMBT5551
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | -150 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current | -600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 416 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=-100A, IE=0 | -160 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC=-1mA, IB=0 | -150 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=-10A, IC=0 | -5 | V | ||
| ICBO | Collector cut-off current | VCB=-120V, IE=0 | -0.1 | A | ||
| IEBO | Emitter cut-off current | VEB=-4V, IC=0 | -0.1 | A | ||
| hFE(1) | DC current gain | VCE=-5V, IC=-1mA | 80 | |||
| hFE(2) | DC current gain | VCE=-5V, IC=-10mA | 100 | 300 | ||
| hFE(3) | DC current gain | VCE=-5V, IC=-50mA | 50 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | IC=-10mA, IB=-1mA | -0.2 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | IC=-50mA, IB=-5mA | -0.5 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | IC=-10mA, IB=-1mA | -1 | V | ||
| VBE(sat)2 | Base-emitter saturation voltage | IC=-50mA, IB=-5mA | -1 | V | ||
| fT | Transition frequency | VCE=-5V,IC=-10mA, f=30MHz | 100 | MHz |
2410121332_High-Diode-MMBT5401_C466640.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
