P channel MOSFET HUASHUO HSL3103 30V fast switching device for synchronous buck converter applications
Key Attributes
Model Number:
HSL3103
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
26mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
158pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
1.345nF@15V
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
HSL3103
Package:
SOT-223
Product Description
Product Overview
The HSL3103 is a P-channel, 30V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HSL
- Product Type: P-Channel MOSFET
- Certifications: RoHS, Green Product
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSL3103 | Drain-Source Voltage (VDS) | -30 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID) | VGS @ -10V, TA=25 | -6 | A | |||
| Continuous Drain Current (ID) | VGS @ -10V, TA=70 | -4.6 | A | |||
| Pulsed Drain Current (IDM) | -24 | A | ||||
| Total Power Dissipation (PD) | TA=25 | 1.5 | W | |||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | 85 | /W | ||||
| Thermal Resistance Junction-Case (RJC) | 30 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=-250uA | -30 | V | |||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-10V , ID=-5A | 26 | 32 | m | ||
| Static Drain-Source On-Resistance (RDS(ON),max) | VGS=-4.5V , ID=-4A | 36 | 45 | m | ||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =-250uA | -1.0 | -2.5 | V | ||
| Drain-Source Leakage Current (IDSS) | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=±20V , VDS=0V | ±100 | nA | |||
| Diode Characteristics | Diode Forward Voltage (VSD) | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse Recovery Time (trr) | IF=-5A , dI/dt=100A/µs , TJ=25 | 16.3 | nS | |||
| Reverse Recovery Charge (Qrr) | 5.9 | nC |
2410121448_HUASHUO-HSL3103_C7543690.pdf
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