SOT23 Package NPN Transistor High Diode MMBT2222A With Epitaxial Planar Die For General Applications
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
Product Overview
The MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers a complementary PNP type, the MMBT2907A. This device is packaged in a SOT-23 package, making it suitable for surface mount applications.
Product Attributes
- Brand: High Diode Semiconductor
- Complementary Type: MMBT2907A (PNP)
- Package: SOT-23
- Construction: Epitaxial planar die
- Marking: 1P
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current | 600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| V(BR)CBO | Collector-base breakdown voltage | IC= 10A, IE=0 | 75 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 10mA, IB=0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB=60V, IE=0 | 0.01 | A | ||
| ICEX | Collector cut-off current | VCE=30V,VBE(off)=3V | 0.01 | A | ||
| IEBO | Emitter cut-off current | VEB= 3V, IC=0 | 0.1 | A | ||
| hFE(1) | DC current gain | VCE=10V, IC= 150mA | 100 | 300 | ||
| hFE(2) | DC current gain | VCE=10V, IC= 0.1mA | 40 | |||
| hFE(3) | DC current gain | VCE=10V, IC= 500mA | 42 | |||
| VCE(sat) | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 1.0 | V | ||
| VCE(sat) | Collector-emitter saturation voltage | IC=150 mA, IB=15mA | 0.3 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=500 mA, IB= 50mA | 2.0 | V | ||
| VBE(sat) | Base-emitter saturation voltage | IC=150 mA, IB=15mA | 1.2 | V | ||
| fT | Transition frequency | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| td | Delay time | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 10 | ns | ||
| tr | Rise time | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 25 | ns | ||
| tS | Storage time | VCC=30V, IC=150mA IB1=-IB2=15mA | 225 | ns | ||
| tf | Fall time | VCC=30V, IC=150mA IB1=-IB2=15mA | 60 | ns | ||
| RJA | Thermal Resistance From Junction To Ambient | 417 | /W | |||
| Tj | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | +150 |
2410121531_High-Diode-MMBT2222A_C466638.pdf
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