High Cell Density P Channel MOSFET HUASHUO HSP4119 Designed for Switching in Buck Converter Circuits
Key Attributes
Model Number:
HSP4119
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V;4.9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
660pF
Number:
1 P-Channel
Output Capacitance(Coss):
780pF
Input Capacitance(Ciss):
10.7nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
190nC@10V
Mfr. Part #:
HSP4119
Package:
TO-220
Product Description
HSP4119 P-Channel 40V Fast Switching MOSFET
The HSP4119 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for most synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability approval. Key features include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density trench technology.
Product Attributes
- Brand: HS-Semi
- Product Type: P-Channel MOSFET
- Technology: Trench
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -150 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -103 | A | |||
| IDM | Pulsed Drain Current2 | -580 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 1250 | mJ | |||
| IAS | Avalanche Current | -70 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient 1(Steady State) | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-case 1 | --- | 0.95 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 3.9 | 4.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 4.9 | 5.6 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25 | --- | -1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=125 | --- | -100 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | |
| Rg | Gate resistance | VDS=0V , VGS=0V , f=1MHz | 1.7 | |||
| Qg | Total Gate Charge (-10V) | VDS=-20V , VGS=-10V , ID=-20A | 190 | --- | nC | |
| Qgs | Gate-Source Charge | 24 | --- | |||
| Qgd | Gate-Drain Charge | 38 | --- | |||
| td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3, ID=-10A | 18 | --- | ns | |
| tr | Rise Time | 3.6 | --- | |||
| td(off) | Turn-Off Delay Time | 21 | --- | |||
| tf | Fall Time | 39 | --- | |||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | 10700 | --- | pF | |
| Coss | Output Capacitance | 780 | --- | |||
| Crss | Reverse Transfer Capacitance | 660 | --- | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | -150 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-20A , TJ=25 | --- | -1.2 | V | |
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/s , TJ=25 | 52 | --- | nS | |
| Qrr | Reverse Recovery Charge | 128 | --- | nC | ||
2504101957_HUASHUO-HSP4119_C22359313.pdf
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