Power Management Solution HUASHUO HSU15810C N Channel Fast Switching MOSFET with 100V Voltage Rating
Key Attributes
Model Number:
HSU15810C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
112A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
4.725nF
Input Capacitance(Ciss):
4.725nF@50V
Pd - Power Dissipation:
104W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
HSU15810C
Package:
TO-252-2L
Product Description
Product Overview
The HSU15810C is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 100V breakdown voltage and is optimized for fast switching characteristics. This MOSFET is suitable for general applications requiring efficient power management.
Product Attributes
- Brand: HS-Semi
- Model Series: HSU15810C
- Channel Type: N-Channel
- Switching Type: Fast Switching
Technical Specifications
| Parameter | Condition | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | |||
| Storage Temperature Range | -55 | 150 | ||||
| Continuous Drain Current | (TC=25) | ID | 112 | A | ||
| Total Gate Charge | VDS=50V, VGS=10V, ID=20A | Qg | 72 | nC | ||
| Gate-Source Charge | VDS=50V, VGS=10V, ID=20A | Qgs | 28 | nC | ||
| Gate-Drain Charge | VDS=50V, VGS=10V, ID=20A | Qgd | 15 | nC | ||
| Turn-On Delay Time | VDD=50V, VGS=10V, RG=3.0, ID=20A | Td(on) | 35 | ns | ||
| Rise Time | VDD=50V, VGS=10V, RG=3.0, ID=20A | Tr | 18 | ns | ||
| Turn-Off Delay Time | VDD=50V, VGS=10V, RG=3.0, ID=20A | Td(off) | 45 | ns | ||
| Fall Time | VDD=50V, VGS=10V, RG=3.0, ID=20A | Tf | 55 | ns | ||
| Input Capacitance | VDS=50V, VGS=0V, f=1MHz | Ciss | 4725 | pF | ||
| Output Capacitance | VDS=50V, VGS=0V, f=1MHz | Coss | 609 | pF | ||
| Reverse Transfer Capacitance | VDS=50V, VGS=0V, f=1MHz | Crss | 14 | pF |
2410121636_HUASHUO-HSU15810C_C22359254.pdf
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