Dual N Channel MOSFET HUASHUO HSSX2204 Featuring Low Gate Charge and High Side Switching Capability
Key Attributes
Model Number:
HSSX2204
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
600mA
RDS(on):
500mΩ@4.5V,0.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
12pF@6V
Number:
2 N-Channel
Input Capacitance(Ciss):
42pF@6V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
3.6nC@4.5V
Mfr. Part #:
HSSX2204
Package:
SOT-563
Product Description
Product Overview
The HSSX2204 is a dual N-channel MOSFET featuring high cell density and trenched construction, offering excellent RDS(ON) and efficiency. It is designed for small power switching and load switch applications. This MOSFET provides fast switching speed, super low gate charge, high-side switching capability, low threshold voltage, and is ESD protected up to 2KV. It meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: HS-Semi
- Product Type: Dual N-Channel MOSFET
- Certifications: RoHS, Green Product
- ESD Protection: Up to 2KV
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| HSSX2204 | Drain-Source Voltage (VDS) | 20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | ||||
| Continuous Drain Current (ID) @ TA=25 (VGS @ 4.5V) | 0.8 | A | ||||
| Pulsed Drain Current (IDM) | 3.2 | A | ||||
| Total Power Dissipation (PD) @ TA=25 | 0.15 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-ambient (RJA) | 800 | /W | ||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 20 | V | |||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=600mA | 300 | 500 | m | ||
| VGS=2.5V , ID=400mA | 600 | 800 | m | |||
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 0.5 | 0.7 | 1.0 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=25 | 1 | uA | |||
| Drain-Source Leakage Current (IDSS) | VDS=20V , VGS=0V , TJ=55 | 5 | uA | |||
| Gate-Source Leakage Current (IGSS) | VGS=8V , VDS=0V | 10 | uA | |||
| Charge Characteristics | Total Gate Charge (Qg) (4.5V) | VDS=6V , VGS=4.5V , ID=0.3A | 3.6 | nC | ||
| Gate-Source Charge (Qgs) | 2.1 | nC | ||||
| Gate-Drain Charge (Qgd) | 1.5 | nC | ||||
| Switching Characteristics | Turn-On Delay Time (Td(on)) | VDD=6V , VGS=4.5V , RG=6 , ID=0.3A | 5.8 | ns | ||
| Rise Time (Tr) | 15 | ns | ||||
| Turn-Off Delay Time (Td(off)) | 21 | ns | ||||
| Fall Time (Tf) | 7.1 | ns | ||||
| Capacitance Characteristics | Input Capacitance (Ciss) | VDS=6V , VGS=0V , f=1MHz | 42 | pF | ||
| Output Capacitance (Coss) | 25 | pF | ||||
| Reverse Transfer Capacitance (Crss) | 12 | pF | ||||
| Diode Characteristics | Continuous Source Current (IS) | VG=VD=0V , Force Current | 0.8 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=0.3A , TJ=25 | 1.2 | V |
Ordering Information
| Part Number | Package Code | Packaging | Quantity |
|---|---|---|---|
| HSSX2204 | SOT-563 | 3000/Tape&Reel | 3000 |
2410121435_HUASHUO-HSSX2204_C7543681.pdf
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