N channel 40v fast switching mosfet huashuo hsu4054 perfect for dc dc converters and or ing circuits
Key Attributes
Model Number:
HSU4054
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
493pF
Input Capacitance(Ciss):
950pF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
HSU4054
Package:
TO-252-2L
Product Description
Product Overview
The HSU4054 is a N-Channel 40V Fast Switching MOSFET designed for high-efficiency power applications. Featuring advanced trench technology and low gate charge, it is ideal for SMPS synchronous rectification, DC/DC converters, and Or-ing circuits. This MOSFET offers fast switching characteristics and is 100% UIS tested, ensuring reliability in demanding environments. Its robust design includes low gate charge and low static drain-source on-resistance for optimal performance.
Product Attributes
- Brand: HS
- Technology: Advanced Trench Technology
- Testing: 100% UIS Tested
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSU4054 | Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 40 | --- | --- | V |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | --- | 4.7 | 6.5 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=15A | --- | 7.5 | 10.5 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.9 | 2.2 | V | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| Drain-Source Leakage Current (IDSS) | VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | |
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | --- | --- | 100 | nA | |
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | --- | 1.9 | --- | ||
| Total Gate Charge (Qg) | VDS=20V , VGS=10V , ID=15A | --- | 20 | --- | nC | |
| Gate-Source Charge (Qgs) | --- | 3.5 | --- | nC | ||
| Gate-Drain Charge (Qgd) | --- | 4.2 | --- | nC | ||
| Input Capacitance (Ciss) | VDS=20V , VGS=0V , f=1MHz | --- | 950 | --- | pF | |
| Output Capacitance (Coss) | --- | 493 | --- | pF | ||
| HSU4054 | Reverse Transfer Capacitance (Crss) | --- | 48 | --- | pF | |
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 | V | |
| Continuous Source Current (IS) | VG=VD=0V , Force Current | --- | --- | 50 | A |
| Parameter | Rating | Units | |
|---|---|---|---|
| Drain-Source Voltage (VDS) | 40 | V | |
| Gate-Source Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID@TC=25) | 50 | A | |
| Continuous Drain Current (ID@TC=100) | 31 | A | |
| Pulsed Drain Current (IDM) | 90 | A | |
| Single Pulse Avalanche Energy (EAS) | 68 | mJ | |
| Avalanche Current (IAS) | 37 | A | |
| Total Power Dissipation (PD@TC=25) | 70 | W | |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction-ambient (RJA) | --- | 55 | /W |
| Thermal Resistance Junction-Case (RJC) | --- | 1.7 | /W |
2410122026_HUASHUO-HSU4054_C22359248.pdf
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