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quality Trench N Channel MOSFET HUASHUO HSP30N15A Featuring Low Gate Charge and Excellent RDS ON Performance factory
quality Trench N Channel MOSFET HUASHUO HSP30N15A Featuring Low Gate Charge and Excellent RDS ON Performance factory

Trench N Channel MOSFET HUASHUO HSP30N15A Featuring Low Gate Charge and Excellent RDS ON Performance

Key Attributes
Model Number: HSP30N15A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
40mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
4pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
1.19nF@75V
Pd - Power Dissipation:
81W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
HSP30N15A
Package:
TO-220
Product Description

HSP30N15A N-Ch 150V Fast Switching MOSFETs

Product Overview

The HSP30N15A is a high-performance trench N-channel MOSFET designed for synchronous buck converter applications. It features extreme high cell density, offering excellent RDS(ON) and low gate charge. This MOSFET meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology, making it suitable for demanding power conversion scenarios.

Product Attributes

  • Brand: HS-Semi
  • Product Type: N-Channel MOSFET
  • Technology: Trench
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS guaranteed, full function reliability approved

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 150 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1 30 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1 18 A
ID@TA=25 Continuous Drain Current, VGS @ 10V1 4.9 A
ID@TA=70 Continuous Drain Current, VGS @ 10V1 3.9 A
IDM Pulsed Drain Current2 60 A
PD@TC=25 Total Power Dissipation3 81 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 60 /W
RJC Thermal Resistance Junction-Case1 1.2 /W
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A 40 56 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.9 4 V
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A 25 S
Qg Total Gate Charge VDS=75V , VGS=10V , ID=10A 23 nC
Qgs Gate-Source Charge 5.8
Qgd Gate-Drain Charge 4.2
td(on) Turn-On Delay Time VDD=75V , VGS=10V , RG=3.3 , ID=10A 16 ns
tr Rise Time 18.6
td(off) Turn-Off Delay Time 28.5
tf Fall Time 6.5
Ciss Input Capacitance VDS=75V , VGS=0V , f=1MHz 1190 pF
Coss Output Capacitance 73
Crss Reverse Transfer Capacitance 4
Diode Characteristics (TJ=25 , unless otherwise noted)
VSD Diode Forward Voltage2 VGS=0V , IS=1A 1.2 V
trr Reverse Recovery Time IF=10A , dI/dt=100A/s , TJ=25 45 nS
Qrr Reverse Recovery Charge 138 nC

Notes:

  • 1 Data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2 Data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3 Power dissipation is limited by 150 junction temperature.
  • 4 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2411121146_HUASHUO-HSP30N15A_C7543711.pdf
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